Horizontal access semiconductor photo detector
View Patent ↗A horizontal access semiconductor photo detector ( 2 ) comprises a horizontal light absorbing layer ( 8 ) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion ( 18 ) and a second light confining portion ( 20, 21 ) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.
1. A horizontal access semiconductor photo detector comprising a horizontal light absorbing layer for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation.
2. A detector according to claim 1 wherein the detector is configured to have a waveguide portion and a light confining portion arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion.
3. A detector according to claim 2 wherein the waveguide portion transfers light into the light confining portion at an angle to a boundary of the light confining portion greater than the critical angle of the boundary.
4. A detector according to claim 2 wherein the light confining portion has a cylindrical outer boundary.
5. A detector according to claim 4 wherein the waveguide portion injects light substantially tangentially into the light confining portion with respect to the cylindrical outer boundary.
6. A detector according to claim 1 comprising a longitudinal waveguide portion and a cylindrical light confining portion.
7. A detector according to claim 1 comprising a longitudinal waveguide portion and annular light confining portion.
8. A detector according to claim 2 wherein the waveguide portion is tapered in order to reduce the size of the interface between the waveguide portion and the light confining portion.
9. A detector according to claim 1 wherein the horizontal light absorbing layer is a layer in the second light confining portion.
10. A detector according to claim 1 wherein a waveguide made of a material having a refractive index which is less than the refractive index of the light absorbing layer is used to couple light into the light absorbing layer by evanescent coupling and excite whispering gallery modes of propagation therein.
11. A detector according to claim 1 wherein the horizontal light absorbing layer is located vertically above or below the light confining portion and has a higher refractive index than the light confining portion and light is coupled vertically into the horizontal light absorbing layer from the light confining portion by evanescent coupling.
12. A detector according to claim 2 wherein the waveguide portion and the light confining portion are made of a material having a refractive index which is less than the refractive index of the light absorbing layer and the light confining portion extends around the periphery of the light absorbing layer to excite whispering gallery modes in the light absorbing layer by evanescent coupling.
13. A detector according to claim 10 wherein the waveguide portion and the light confining portion are made from polymer.
14. A detector according to claims 10 wherein the waveguide portion and the light confining portion are made from nitride.
15. A separate absorption and multiplication avalanche detector according to claim 1 .
16. A p-i-n photo detector according to claim 1 .
17. A Silicon based detector according to claim 1 comprising a Silicon Germanium light absorbing layer.
18. An avalanche detector according to claim 1 having an avalanche region wherein the light absorbing layer is formed as a mesa above a central part of the avalanche region.
19. An avalanche detector according to claim 2 wherein the horizontal width of the waveguide portion is less than the horizontal width of the light confining portion.
20. An avalanche detector according to claim 19 wherein the horizontal width of the waveguide portion is less than ⅛ of the horizontal width of the light confining portion.
21. A horizontal access semiconductor photo detector comprising a horizontal light absorbing layer for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation, wherein the detector is configured to have a waveguide portion and a light confining portion arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion, wherein the horizontal width of the waveguide portion is less than ⅛ of the horizontal width of the light confining portion.