Transimpedance amplifier assembly with separate ground leads and separate power leads for included circuits
View Patent ↗The optoelectronic device includes a photo diode and an amplifier, which amplifies output of the photo diode. The amplifier includes an input stage and an output stage. In one embodiment, the input stage has a series connection to a resistor, which is connected to a ground. The output stage has a connection to ground that does not overlap the series connection. In another embodiment, the input stage has a first connection to a bypass capacitor, which is connected to a power source. The output stage has a separate, second connection to the capacitor, which prevents high frequencies from flowing between the input stage and said output stage via a connection to the power source.
1. An optoelectronic device, comprising:
a transistor outline housing;
a photo diode within the transistor outline housing;
an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having an input node coupled to the photo diode;
the input amplifier stage configured to have a series connection to a first resistor, said first resistor connected to a ground node;
the output amplifier stage configured to have a connection to the ground node, said connection not overlapping the series connection; and
an output node, wherein the output amplifier stage is coupled to a signal contact through said output node.
2. The optoelectronic device of claim 1 , wherein said first resistor is within the transistor outline housing and external to the integrated circuit.
3. The optoelectronic device of claim 1 , further comprising a second resistor, wherein the input amplifier stage is configured to have a series connection to said second resistor, said second resistor connected to the ground node.
4. The optoelectronic device of claim 3 , wherein
each conductive connection between the input amplifier stage and said first and second resistors and
each conductive connection between said first and second resistors and the ground node is formed by a bond wire, wherein said bond wire has an associated inductance.
5. The optoelectronic device of claim 3 , wherein said second resistor is within the transistor outline housing and external to the integrated circuit.
6. The optoelectronic device of claim 1 , further comprising
a plurality of additional connections between the ground node and the output amplifier stage, each of said plurality of additional connections formed by a bond wire,
wherein said bond wire is connected to both said ground node and said output amplifier stage, wherein said bond wire has an associated inductance.
7. The optoelectronic device of claim 1 , further comprising one or more additional output nodes, wherein
each of said one or more additional output nodes connects the output amplifier stage to one of the signal contact and a second signal contact; and
at least one of said one or more additional output nodes is connected to the second signal contact.
8. The optoelectronic device of claim 7 , wherein
each conductive connection between the output amplifier stage and the signal contact and
each conductive connection between the output amplifier stage and the second signal contact is formed by a bond wire, wherein said bond wire has an associated inductance.
9. The optoelectronic device of claim 1 , wherein
the input amplifier stage and the output amplifier stage are connected to a voltage source pad, said voltage source pad connected by one or more bond wires to voltage source within the transistor outline housing,
wherein each of said one or more bond wires has an associated inductance.
10. An optoelectronic device, comprising:
a transistor outline housing;
a photo diode within the transistor outline housing;
an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having an input node coupled to the photo diode;
the input amplifier stage configured to have a series connection to a first resistor and a second resistor, each of said first and second resistors connected to a ground node;
wherein each conductive connection between the input amplifier stage and said first and second resistors and each conductive connection between said first and second resistors and the ground node is formed by a bond wire, wherein said bond wire has an associated inductance; and
the output amplifier stage configured to have a connection to the ground node, said connection not overlapping the series connection.
11. An optoelectronic device, comprising:
a transistor outline housing;
a photo diode within the transistor outline housing;
an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having, an input node coupled to the photo diode;
the input amplifier stage configured to have a series connection to a first resistor, said first resistor connected to a ground node,
the output amplifier stage configured to have a connection to the ground node, said connection not overlapping the series connection; and
a plurality of additional connections between the ground node and the output amplifier stage, each of said plurality of additional connections formed by a bond wire,
wherein said bond wire is connected to both the ground node and the output amplifier stage, wherein said bond wire has an associated inductance.
12. An optoelectronic device, comprising:
a transistor outline housing;
a photo diode within the transistor outline housing;
an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having an input node coupled to the photo diode;
the input amplifier stage configured to have a series connection to a first resistor, said first resistor connected to a ground node;
the output amplifier stage configured to have a connection to the ground node, said connection not overlapping the series connection;
the input amplifier stage and the output amplifier stage connected to a voltage source pad, said voltage source pad connected by one or more bond wires to voltage source within the transistor outline housing,
wherein each of said one or more bond wires has an associated inductance.