IP Library Granted Patent US 7,299,528
Granted Patent B2
US 7,299,528 · App. 10/288,529 · Granted Nov 27, 2007

Method for forming a multi-frequency surface acoustic wave device

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Quick Facts
Patent No.
US 7,299,528
App. No.
10/288,529
Granted
Nov 27, 2007
Kind
B2
Abstract

Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.

Claims (7)

1. A method of manufacturing a surface acoustic wave device on a piezoelectric substrate, said method comprising: forming a patterned resist layer on said piezoelectric substrate having gaps present therein exposing portions of said piezoelectric substrate in superimposition therewith; forming a plurality of waveguide elements by forming, within said gaps, multiple layers of conductive material, with said plurality of waveguide elements defining a resonant frequency associated therewith; and varying said resonant frequency associated with a subset of said plurality of waveguide elements by removing one of said multiple layers associated with said subset, wherein forming said plurality of waveguide elements further includes forming a first conductive layer over said patterned resist layer and said portions and forming a second conductive layer over said first conductive layer, with said second conductive layer having a thickness at least as great as a thickness of said first conductive layer.

2. The method as recited in claim 1 wherein varying said resonant frequency further includes covering said multiple layers of conductive material with resist material and removing a sub-portion of said resist material to expose a sub-section of said multiple conductive layers and etching one of said multiple conductive layers in said sub-section.

3. The method as recited in claim 1 wherein each of said multiple layers of conductive material includes material selected from a set consisting of Ti, Al, Ni, W and Cu, and said substrate includes compounds selected from a set of compounds consisting of LiTaO 3 , LiNbO 3 , Li 2 B 407 , La 3 Ga 5 SiO 14 and Pb(Zr x Ti 1−x )O 3 .

4. The method as recited in claim 1 further including forming said piezoelectric substrate by forming a piezoelectric layer atop of a semiconductor wafer, with said piezoelectric layer including material selected from a set of materials consisting of a piezoelectric single crystal and a piezoelectric ceramic.

5. The method as recited in claim 1 wherein forming said plurality of waveguide elements further includes forming an adhesion layer formed from a first material forming adjacent to said patterned resist layer and said portions and depositing a conductive film, formed from a second material, adjacent to said adhesion film, wherein said first and second materials differ.

6. The method as recited in claim 5 wherein forming said plurality of waveguide elements further includes depositing a cap layer adjacent to said first conductive film and depositing an additional conductive film adjacent to said cap layer.

7. The method as recited in claim 1 wherein forming said patterned resist layer further includes providing said gaps present therein with differing dimensions, with a first subgroup having dimensions differing from the dimensions associated with gaps associated with a second subgroup of said gaps.

Assignments (1)
MERGER Recorded Jan 11, 2016
From: MASSIMO DIN SOLUTIONS, LLC
To: CALLAHAN CELLULAR L.L.C.
Reel/Frame 037471/0799 →