Signal processing semiconductor integrated circuit device
View Patent ↗A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.
1. A radio-communication semiconductor integrated circuit comprising:
a low-noise amplification circuit receiving a signal and providing an amplified signal having a first frequency;
a first mixer receiving the amplified signal and converting the amplified signal to a signal having a second frequency which is lower than the first frequency;
a demodulator coupled to the first mixer and demodulating the signal having the second frequency;
a modulator modulating a signal to be transmitted; and
a second mixer coupled to the modulator and providing a signal having a third frequency in accordance with an output signal from the modulator,
wherein the first mixer is formed in a first island area which is an area enclosed by an isolation band in a first semiconductor region which is disposed on a surface of a second semiconductor region via an isolation region,
wherein the second mixer is formed in a second island area which is an area enclosed by an isolation band in the first semiconductor region, and
wherein one of the first island area and the second island area includes a third semiconductor region to which a predetermined voltage is applied and which has a resistance lower than that of the one of the first island area and the second island area.
2. A radio-communication semiconductor integrated circuit according to claim 1 , further comprising:
a fourth semiconductor region formed in a semiconductor region which is disposed between the first island area and the second island area,
wherein a predetermined voltage is applied to the fourth semiconductor region which has a resistance lower than that of the semiconductor region which is disposed between the first island area and the second island area.
3. A radio-communication semiconductor integrated circuit according to claim 2 , wherein the predetermined voltage to be supplied to the third semiconductor region is substantially equal to the predetermined voltage to be supplied to the fourth semiconductor region.
4. A radio-communication semiconductor integrated circuit comprising:
a low-noise amplification circuit receiving a signal and providing an amplified signal having a first frequency;
a first mixer receiving the amplified signal and converting the amplified signal to a signal having a second frequency which is lower than the first frequency;
a demodulator coupled to the first mixer and demodulating the signal having the second frequency;
a modulator modulating a signal to be transmitted; and
a second mixer coupled to the modulator and providing a signal having a third frequency in accordance with an output signal from the modulator,
wherein the first mixer is formed in a first island area which is an area enclosed by an isolation band in a first semiconductor region which is disposed on a surface of a second semiconductor region via an isolation region,
wherein the second mixer is formed in a second island area which is an area enclosed by an isolation band in the first semiconductor region, and
wherein each of the first island area and the second island area includes a third semiconductor region to which a predetermined voltage is applied and which has a resistance lower than that of each of the first island area and the second island area.
5. A radio-communication semiconductor integrated circuit according to claim 4 , further comprising:
a fourth semiconductor region formed in a semiconductor region which is disposed between the first island area and the second island area,
wherein a predetermined voltage is applied to the fourth semiconductor region which has a resistance lower than that of the semiconductor region which is disposed between the first island area and the second island area.
6. A radio-communication semiconductor integrated circuit according to claim 5 , wherein the predetermined voltage to be supplied to the third semiconductor region is substantially equal to the predetermined voltage to be supplied to the fourth semiconductor region.
7. A radio-communication semiconductor integrated circuit comprising:
a low-noise amplification circuit receiving a signal and providing an amplified signal having a first frequency;
a first mixer receiving the amplified signal and converting the amplified signal to a signal having a second frequency which is lower than the first frequency;
a demodulator coupled to the first mixer and demodulating the signal having the second frequency;
a modulator modulating a signal to be transmitted; and
a second mixer coupled to the modulator and providing a signal having a third frequency in accordance with an output signal from the modulator,
wherein the demodulator is formed in a first island area which is an area enclosed by an isolation band in a first semiconductor region which is disposed on a surface of a second semiconductor region via an isolation region,
wherein the modulator is formed in a second island area which is an area enclosed by an isolation band in the first semiconductor region, and
wherein one of the first island area and the second island area includes a third semiconductor region to which a predetermined voltage is applied and which has a resistance lower than that of the one of the first island area and the second island area.
8. A radio-communication semiconductor integrated circuit according to claim 7 , further comprising:
a fourth semiconductor region formed in a semiconductor region which is disposed between the first island area and the second island area,
wherein a predetermined voltage is applied to the fourth semiconductor region which has a resistance lower than that of the semiconductor region which is disposed between the first island area and the second island area.
9. A radio-communication semiconductor integrated circuit according to claim 8 , wherein the predetermined voltage to be supplied to the third semiconductor region is substantially equal to the predetermined voltage to be supplied to the fourth semiconductor region.
10. A radio-communication semiconductor integrated circuit comprising:
a low-noise amplification circuit receiving a signal and providing an amplified signal having a first frequency;
a first mixer receiving the amplified signal and converting the amplified signal to a signal having a second frequency which is lower than the first frequency;
a demodulator coupled to the first mixer and demodulating the signal having the second frequency;
a modulator modulating a signal to be transmitted; and
a second mixer coupled to the modulator and providing a signal having a third frequency in accordance with an output signal from the modulator,
wherein the demodulator is formed in a first island area which is an area enclosed by an isolation band in a first semiconductor region which is disposed on a surface of a second semiconductor region via an isolation region,
wherein the modulator is formed in a second island area which is an area enclosed by an isolation band in the first semiconductor region, and
wherein each of the first island area and the second island area includes a third semiconductor region to which a predetermined voltage is applied and which has a resistance lower than that of each of the first island area and the second island area.
11. A radio-communication semiconductor integrated circuit according to claim 10 , further comprising:
a fourth semiconductor region formed in a semiconductor region which is disposed between the first island area and the second island area,
wherein a predetermined voltage is applied to the fourth semiconductor region which has a resistance lower than that of the semiconductor region which is disposed between the first island area and the second island area.
12. A radio-communication semiconductor integrated circuit according to claim 11 , wherein the predetermined voltage to be supplied to the third semiconductor region is substantially equal to the predetermined voltage to be supplied to the fourth semiconductor region.
13. A radio-communication semiconductor integrated circuit according to claim 10 , further comprising:
a third island area which is an area enclosed by an isolation band in the first semiconductor region, in which the first mixer is formed, and which includes a fifth semiconductor region,
wherein a predetermined voltage is applied to the fifth semiconductor region, and
wherein the fifth semiconductor region has a resistance lower than that of the third island area.
14. A radio-communication semiconductor integrated circuit according to claim 13 , wherein the second island area is disposed between the first island area and the third island area in a location.
15. A radio-communication semiconductor integrated circuit according to claim 14 , wherein the predetermined voltage to be supplied to the third semiconductor region is substantially equal to the predetermined voltage to be supplied to the fifth semiconductor region.