Fabrication method for an interconnect on a substrate
View Patent ↗Method for fabricating an interconnect on a substrate. The method includes applying a mask on the substrate, patterning the mask, so that it has an opening corresponding to the interconnect, providing the interconnect in the opening on the substrate, widening the opening in order to uncover a region laterally adjoining the interconnect, encapsulating of interconnect in the widened opening, andremoving the mask.
1. A method for fabricating an interconnect on a substrate comprising:
applying a mask on the substrate;
patterning the mask, so that it has an opening corresponding to the interconnect;
providing the interconnect in the opening on the substrate;
widening the opening in order to uncover a region laterally adjoining the interconnect along the entire vertical extension of the interconnect;
encapsulating of the interconnect in the widened opening; and
removing the mask.
2. The method according to claim 1 , further comprising:
applying at least one of a diffusion barrier and a short-circuit layer on the substrate, before said applying of the mask.
3. The method according to claim 2 , wherein the at least one of the diffusion barrier and the short-circuit layer comprises a metal layer.
4. The method according to claim 3 , wherein the metal layer contains titanium.
5. The method according to claim 2 , further comprising applying a carrier layer to the substrate, before said applying of the mask.
6. The method according to claim 5 , wherein said applying of the carrier layer is after said applying the at least one of a diffusion barrier and a short-circuit layer.
7. The method according to claim 6 , wherein the carrier layer comprises one of a corrosive metal compound and a corrosive metal.
8. The method according to claim 7 , wherein the one of a corrosive metal compound and a corrosive metal contains copper.
9. The method according to claim 1 , wherein the interconnect comprises a corrosive metal.
10. The method according to claim 9 , wherein the corrosive metal of the interconnect is copper.
11. The method according to claim 1 , wherein said applying the mask is by electrical deposition.
12. The method according to claim 1 , wherein said patterning of the mask is by a photolithographic process.
13. The method according to claim 1 , wherein said widening of the opening in the mask is effected by an etching process.
14. The method according to claim 13 , wherein said etching process is effected isotropically.
15. The method according to claim 14 , wherein:
said etching includes using a hydroxide solution; and
the mask is a photoresist mask.
16. The method according to claim 1 , wherein said encapsulating is effected by depositing a non-corrosive material.
17. The method according to claim 16 , wherein the non-corrosive material is metallic.
18. The method according to claim 17 , Wherein the non-corrosive material is nickel.
19. The method according to claim 1 further comprising applying an interconnect layer to the interconnect, after said encapsulating.
20. The method according to claim 19 , wherein the interconnect layer comprises a non-corrosive metal.
21. The method according to claim 6 , further comprising removing the carrier layer by at least one removal etching process, after the removal of the mask.
22. The method according to claim 1 , wherein said encapsulating substantially protects against corrosion protection.
23. The method according to claim 15 , where the hydroxide solution is sodium hydroxide.
24. The method according to claim 20 , wherein the non-corrosive metal of the interconnect layer is gold.