IP Library Granted Patent US 6,937,448
Granted Patent B2
US 6,937,448 · App. 10/294,109 · Granted Aug 30, 2005

Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures

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Quick Facts
Patent No.
US 6,937,448
App. No.
10/294,109
Granted
Aug 30, 2005
Kind
B2
Abstract

A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuO x . Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.

Claims (18)

1. A magnetic head including a spin valve sensor comprising:

a magnetic shield layer (S 1 ) being fabricated above a substrate base;

a first electrical insulation layer (G 1 ) being fabricated above said S 1 layer;

a spin valve sensor structure being disposed above said G 1 layer;

wherein said spin valve sensor structure includes a seed layer being fabricated above said G 1 layer, an antiferromagnetic layer being disposed above said seed layer, a pinned magnetic layer being comprised of a laminated structure including layers of CoFe, Ru, nd CoFe and being disposed above said antiferromagnetic layer, a spacer layer being comprised of CuO x and being disposed upon said pinned magnetic layer, and a free magnetic layer being comprised of a laminated structure including layers of CoFe and NiFe and being dispose upon said spacer layer; and

wherein a magnetic coupling field exists across said CuO x spacer layer having a coupling field strength of from −5 Oe to −15 Oe, and said CuO x spacer layer is formed with a thickness of from 16 Å to 20 Å.

2. A magnetic head as described in claim 1 , wherein said coupling field strength is approximately −10 Oe, and said CuO x spacer thickness is approximately 17 Å.

3. A magnetic head as described in claim 1 wherein said pinned magnetic layer laminated structure includes layers of CoFe, Ru, and CoFe having thicknesses of 17 Å, 8 Å and 17 Å respectively.

4. A magnetic head as described in claim 1 wherein said free magnetic layer laminated structure includes layers of CoFe and NiFe having thicknesses of 10 Å and 20 Å respectively.

5. A hard disk drive including a magnetic head including a spin valve sensor comprising:

a magnetic shield layer (S 1 ) being fabricated above a substrate base;

a first electrical insulation layer (G 1 ) being fabricated above said S 1 layer;

a spin valve sensor structure being disposed above said G 1 layer;

wherein said spin valve sensor structure includes a seed layer being fabricated above said G 1 layer, an antiferromagnetic layer being disposed above said seed layer, a pinned magnetic layer being comprised of a laminated structure including layers of CoFe, Ru, and CoFe and being disposed above said antiferromagnetic layer, a spacer layer being comprised of CuO x and being disposed upon said pinned magnetic layer, and a free magnetic layer being comprised of a laminated structure including layers of CoFe and NiFe and being disposed upon said spacer layer; and

wherein a magnetic coupling field exists across said spacer layer having a coupling field strength of from −5 Oe to −15 Oe, and said spacer layer is formed with a thickness of from 16 Å to 20 Å.

6. A hard disk drive including a magnetic head as scribed in claim 5 wherein said coupling field strength is approximately −10 Oe, and said CuO x spacer thickness is approximately 17 Å.

7. A hard disk drive including a magnetic head as described in claim 5 wherein said pinned magnetic layer laminated structure includes layers of CoFe, Ru, and CoFe having thicknesses of 17 Å, 8 Å and 17 Å respectively.

8. A hard disk drive including a magnetic head as described in claim 5 wherein said free magnetic layer laminated structure includes layers of CoFe and NiFe having thicknesses of 10 Å and 20 Å respectively.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040820/0802 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2003
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 014175/0987 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2002
From: LEE, WEN-YAUNG; LIN, TSANN; MAURI, DANIELLE; ZELTSER,ALEXANDER MICHAEL
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 013491/0499 →