Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same
View Patent ↗The present invention is directed to a top surface of a workpiece surface influencing device and a method of using the same. The top surface of the workpiece surface influencing device is adapted for use in an electrochemical mechanical processing apparatus in which a solution becomes disposed onto a conductive surface of a workpiece and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between the top surface and the conductive surface. The top surface comprises a ceramic material that presents a substantially planar contact area to the conductive surface, the ceramic material having a hardness greater than that of the conductive surface. A plurality of channels are formed through the top surface.
1. An electrochemical mechanical processing apparatus for processing comprising:
a workpiece surface influencing device comprising a top surface having a sweeping surface comprising a ceramic material that presents a substantially planar contact area to a conductive surface of the wafer, wherein the substantially planar contact area includes a plurality of contact regions, each of the contact regions including a region top surface that is substantially planar with other region top surfaces;
a plurality of channels formed through the top surface, the channels being configured to communicate electrolyte therethrough to the conductive surface of the wafer while relative movement and physical contact exists between the sweeping surface and the conductive surface, wherein each of the plurality of contact regions is formed over a conducting material, the conducting material having recessed and raised regions, the ceramic material coating the raised and recessed regions to define the contact regions; and
an electrode configured to be in contact with the electrolyte while relative movement and physical contact exists between the sweeping surface and the conductive surface.
2. The apparatus according to claim 1 further including an exposed area of the conducting material adapted to provide an electrical connection to the conducting material and enabling the conducting material to operate as one of a cathode and an anode.
3. The apparatus according to claim 1 , wherein the region top surface of each of the plurality of contact regions is rounded, such that a top rounded portion of each of the rounded contact regions together form the substantially planar contact area.
4. The apparatus according to claim 1 , wherein the region top surface of each of the plurality of contact regions is triangular such that a top edge portion of each of the triangular contact regions forms the substantially planar contact area.
5. The apparatus according to claim 1 , wherein:
a material below the ceramic material of each of the plurality of contact regions is formed over another material disposed below each of the plurality of contact regions, and
the ceramic material over each of the plurality of contact areas is formed by anodization.
6. The apparatus according to claim 5 wherein the material is the same as the another material.
7. The apparatus according to claim 6 wherein the material is a metal and the another material is another metal.
8. The apparatus according to claim 7 wherein the metal is the same as the another metal.
9. An electrochemical mechanical processing apparatus in which an electrolyte becomes disposed onto a conductive surface of a wafer and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between a top surface of a workpiece surface influencing device of the apparatus and the conductive surface, the apparatus comprising:
the workpiece surface influencing device comprising a top surface having a sweeping surface comprising a ceramic material that presents a substantially planar contact area to the conductive surface of the wafer, wherein the substantially planar contact area includes a plurality of contact regions, each of the contact regions including a region top surface that is substantially planar with other region top surfaces, wherein each of the plurality of contact regions is formed over a conducting material as a separable sweep element, thereby resulting in a plurality of separable sweep elements;
a plurality of channels formed through the top surface; and
an electrode configured to be in contact with the electrolyte while relative movement and physical contact exists between the sweeping surface and the conductive surface.
10. The apparatus according to claim 9 wherein the region top surface of each of the plurality of separable sweep elements is flat.
11. The apparatus according to claim 9 wherein the region top surface of each of the plurality of separable sweep elements is rounded, such that a top rounded portion of each of the separable sweep elements together form the substantially planar contact area.
12. The apparatus according to claim 9 wherein the region top surface of each of the plurality of separable sweep elements is triangular, such that a top edge portion of each of the separable sweep elements together form the substantially planar contact area.
13. The apparatus according to claim 9 , wherein adjacent ones of the plurality of contact areas create therebetween a top part of one of the plurality of channels that is wider than a lower part of the one of the plurality of channels.
14. A top surface of a workpiece surface influencing device for use in an electrochemical mechanical processing apparatus in which an electrolyte becomes disposed onto a conductive surface of a wafer and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between the top surface and the conductive surface, the top surface comprising:
a sweeping surface comprising a ceramic material that presents a substantially planar contact area to the conductive surface of the wafer, wherein the substantially planar contact area includes a plurality of contact regions, each of the contact regions including a region top surface that is substantially planar with other region top surfaces, wherein each of the plurality of contact regions is formed over a conducting material as a separable sweep element, thereby resulting in a plurality of separable sweep elements, wherein at least some of the plurality of separable sweep elements further include drain channels; and
a plurality of channels formed through the top surface.
15. The top surface according to claim 14 wherein the drain channels open to a leading edge of at least some of the plurality of separable sweep elements.
16. A top surface of a workpiece surface influencing device for use in an electrochemical mechanical processing apparatus in which an electrolyte becomes disposed onto a conductive surface of a wafer and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between the top surface and the conductive surface, the top surface comprising:
a sweeping surface comprising a ceramic material that presents a substantially planar contact area to the conductive surface of the wafer, wherein the substantially planar contact area includes a plurality of contact regions, each of the contact regions including a region top surface that is substantially planar with other region top surfaces, wherein each of the plurality of contact regions is formed over a conducting material as a separable sweep element, thereby resulting in a plurality of separable sweep elements; and
a plurality of channels formed through the top surface, wherein:
a material below the ceramic material of each of the plurality of contact regions is formed over another material disposed below each of the plurality of contact regions, and
the ceramic material over each of the plurality of contact areas is formed by anodization.
17. The top surface according to claim 16 , wherein the material is the same as the another material.
18. The top surface according to claim 17 , wherein the material is a metal and the other material is another metal.
19. The top surface according to claim 18 , wherein the metal is the same as the another metal.