Method of forming pattern
View Patent ↗A method of forming a pattern suitable for fabricating a liquid crystal device which includes the steps of forming a film on a substrate, printing a resist pattern by having the film covered with a screen mask, etching the film using the resist pattern as a mask, and stripping the resist pattern.
1. A method of forming a pattern, comprising the steps of:
forming a film on a substrate;
printing a resist pattern by covering the film with a screen mask;
etching the film using the resist pattern used as a mask; and
stripping the resist pattern to form a patterned film,
wherein the screen mask comprises a metal layer and emulsion layers provided on the top and bottom of the metal layer.
2. The method of claim 1 , wherein the size of the pattern in the patterned film depends on the thickness of each of the emulsion layers and the size of opening portions of the screen mask.
3. The method of claim 1 , wherein the metal layer is made of a material that visible rays or UV-rays do not penetrate.
4. The method of claim 3 , wherein the metal layer is made of aluminum.
5. The method of claim 1 , wherein each of the first and second emulsion layers is formed of a polymer mixed with a photosensitive compound.
6. A method of forming a pattern which comprises:
forming a film on a substrate in a form of a composite;
positioned a screen mask over the composite;
applying a resist material to the screen mask to form a resist pattern on the film, the resist material being dropped onto the screen mask where it is sequentially squeezed in one direction; and
forming a pattern by selectively removing portions of the film using the resist pattern as a mask.