Semiconductor device and method of fabricating the same
View Patent ↗A semiconductor device is disclosed which includes a semiconductor chip having a plurality of electrode pads on its upper surface; terminals such as copper posts formed on the upper surface of the semiconductor chip, and electrically connected to each of the electrode pads; a resin deposited on the upper surface of the semiconductor chip, encapsulating the terminals but exposing at least some of them to a predetermined height; and electroconductor members such as solder balls connected to the terminals. There is also disclosed a method of fabricating such a semiconductor device.
1. A method of fabricating a semiconductor device comprising the steps of:
providing a semiconductor wafer including a plurality of semiconductor chips, each of the chips having electrode pads formed on a surface thereof and conductors connected to the electrode pads;
forming terminals on the conductors;
depositing a resin on the semiconductor wafer so as to encapsulate the terminals;
exposing upper side wall faces of the respective terminals by removing portions of the resin, around the respective terminals;
mounting electroconductors on the terminals exposed out of the resin; and
dicing the semiconductor wafer along chip areas so as to form a plurality of semiconductor devices.
2. The method of fabricating a semiconductor device according to claim 1 , wherein portions of the resin, over a topmost surface of and around the upper side wall faces of the respective terminals, are removed through laser irradiation.
3. The method of fabricating a semiconductor device according to claim 1 , wherein each electroconductor is connected to a topmost surface of a respective one of the terminals.
4. The method of fabricating a semiconductor device according to claim 1 , wherein the step of exposing is performed only for terminals formed in a peripheral portion of each of the chip areas.
5. The method of fabricating a semiconductor device according to claim 4 , where in the terminals formed in the peripheral portion are formed of a thermoplastic resin.
6. the method of fabricating a semiconductor device according to claim 1 , wherein each of the exposed terminals has a first width and each of the electrode conductors has a second width that is larger than the first width.
7. A method of fabricating a semiconductor device comprising the steps of:
providing a semiconductor wafer including a plurality of chip areas, the semiconductor wafer having electrode pads disposed in the chip areas and conductors connected to the electrode pads;
forming terminals on the conductors, the terminals having top surfaces and side wall faces;
depositing a resin on the semiconductor wafer, so as to encapsulate each of the terminals;
exposing the top surfaces of the terminals by polishing the resin;
exposing upper portions of the side wall faces of the terminals by removing portions of the resin, around the respective terminals;
mounting electroconductors on the terminals exposed out of the resin; and
dicing the semiconductor wafer along the chip areas so as to form a plurality of semiconductor devices.
8. The method of fabricating a semiconductor device according to claim 7 , wherein portions of the resin, around the respective terminals, are removed through laser irradiation.
9. The method of fabricating a semiconductor device according to claim 7 , wherein the step of exposing the resin is performed only for terminals disposed in a peripheral portion of each of the chip areas.
10. The method of fabricating a semiconductor device according to claim 9 , wherein the terminals formed in the peripheral portion are formed of a thermoplastic resin.
11. The method of fabricating a semiconductor device according to claim 7 , wherein each of the exposed terminals has a first width and each of the electroconductors has a second width that is larger than the first width.
12. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor wafer having a plurality of electrode pads formed thereon and conductors electrically connected thereto;
forming conductive posts on the conductors, the posts having top surfaces and side surfaces;
forming a resin layer to cover the posts;
removing a part of the resin layer so as to expose the top surfaces of the posts;
removing a further part of the resin layer located around the posts so that the side surfaces of the posts are exposed;
mounting electrodes on the exposed top surfaces and side surfaces of the posts; and
dividing the wafer so as to obtain a plurality of semiconductor devices.
13. A method of manufacturing a semiconductor device according to claim 12 , wherein the step of removing a further part is conducted by laser irradiation.
14. A method of manufacturing a semiconductor device according to claim 12 , where each post has a first width at a bottom portion and a second width that is smaller than the first width at a top portion.
15. A method of manufacturing a semiconductor device according to claim 12 , wherein each of the exposed posts has a first width and each of the electrodes has a second width that is larger than the first width.
16. A method of manufacturing or device according to claim 12 , wherein the wafer has a plurality of device formation areas each of which has the conductors and electrode pads.
17. A method of manufacturing a semiconductor device according to claim 12 , wherein the step of removing a further part is performed only for terminals formed in a peripheral portion of each of the device formation areas.
18. A method of manufacturing a semiconductor device according to claim 17 , wherein the terminals formed in the peripheral portion are formed of a thermoplastic resin.