Aluminum oxide material for optical data storage
The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage applications.
1. A crystalline material comprising:
a base material comprising Al 2 O 3 ;
a first dopant comprising magnesium; and
a second dopant comprising carbon, wherein said crystalline material includes a plurality of at least one type of oxygen vacancy defect.
2. The crystalline material of claim 1 , wherein Mg is present in said crystalline material in a quantity of between 1 and 100 ppm of said base material by weight.
3. The crystalline material of claim 1 , wherein Mg is present in said crystalline material in a quantity of between 10 and 40 ppm of said base material by weight.
4. The crystalline material of claim 1 , wherein said Mg is present in said crystalline material in a quantity of about 27 ppm of said base material by weight.
5. The crystalline material of claim 1 , wherein said C is present in said crystalline material in a quantity of between 0.5 and 20 ppm of said base material by weight.
6. The crystalline material of claim 1 , wherein C is present in said crystalline material in a quantity of between 1 and 10 ppm of said base material by weight.
7. The crystalline material of claim 1 , wherein C is present in said crystalline material in a quantity of about 6 ppm of said base material by weight.
8. The crystalline material of claim 1 , wherein said plurality of at least one type of oxygen vacancy are present in said crystalline material at a concentration of about 10 13 -10 19 cm −3 .
9. The crystalline material of claim 1 , wherein said plurality at least one type of oxygen vacancy defect comprises a plurality of F-centers.
10. The crystalline material of claim 9 , wherein said plurality of F-centers are present at a concentration of about 10 16 -10 18 cm −3 .
11. The crystalline material of claim 1 , wherein said plurality of at least one type of oxygen vacancy defect comprises a plurality of F + -centers.
12. The crystalline material of claim 11 , wherein said plurality of F + -centers are present at a concentration of about 10 15 -10 17 cm −3 .
13. The crystalline material of claim 1 , wherein said plurality of at least one type of oxygen vacancy defect comprises a plurality of F 2 2+ -centers.
14. The crystalline material of claim 13 , wherein said plurality of F 2 2+ -centers are present at a concentration of about 10 15 -10 17 cm −3 .
15. The crystalline material of claim 1 , wherein said plurality of at least one type of oxygen vacancy defect comprises a mixture of different types of F-type centers.
16. The crystalline material of claim 1 , wherein said crystalline material has an absorption band in the region of 205±5 nm and said absorption band is related to an emission band in the region of 420±5 nm with a luminescent lifetime of 35±5 ms.
17. The crystalline material of claim 1 , wherein said crystalline material has an absorption bands in the regions of 230±5 nm and 255±5 nm and said absorption bands are related to an emission band in the region of 330±5 nm with a luminescent lifetime of 4±3 ns.
18. The crystalline material of claim 1 , wherein said crystalline material has an absorption band in the region of 335±5 mu and said absorption band is related to an emission band in the region of 750±10 nm with a luminescent lifetime of 80±10 ns.
19. The crystalline material of claim 1 , wherein said crystalline material has an absorption band in the region of 435±5 nm and said absorption band is related to an emission band in the region of 520±10 nm with a luminescent lifetime of 9±3 ns.
20. The crystalline material of claim 1 , wherein said crystalline material has an absorption band in the region of 500±15 nm.
21. The crystalline material of claim 1 , wherein said crystalline material has an absorption band in the region of 630±15 nm.
22. The crystalline material of claim 1 , further comprising a third dopant comprising hydrogen.
23. The crystalline material of claim 22 , wherein said first dopant is present in a quantity of between 1 and 100 ppm of base material by weight; said second dopant is present in a quantity of between 0.5 and 20 ppm of base material by weight; and said third dopant is present in a quantity of between 1 and 100 ppm of base material by weight.
24. The crystalline material of claim 1 , wherein said crystalline material comprises color centers formed by a cluster of defects comprising F 2 2+ -centers charge-compensated with Mg and C impurities.
25. The crystalline material of claim 24 , wherein said color centers have a concentration of about 10 13 to 10 17 cm −3 .
26. The crystalline material of claim 1 , wherein said crystalline material comprises color centers present in a concentration of about 10 13 to 10 19 cm −3 .
27. The crystalline material of claim 1 , wherein said crystalline material includes deep traps of charge.
28. The crystalline material of claim 27 , wherein said deep traps of charge have delocalization temperature about 600° C. to 700° C. and have concentration about 10 13 to 10 17 cm −3 .
29. The crystalline material of claim 1 , wherein said crystalline material is substantially insensitive to room light.
30. The crystalline material of claim 1 , wherein said crystalline material has a photo-ionization cross-section of at least 0.01 cm 2 /J.
31. The crystalline material of claim 1 , wherein said crystalline material has a fluorescence yield of at least 0.1.
32. A crystalline material comprising Al 2 O 3 , wherein said crystalline material includes at least one color center having: an absorption in the region of 435±5 nm, an emission in the region of 520±5 nm and a 9±3 ns fluorescence lifetime.
33. A crystalline material comprising Al 2 O 3 , wherein said crystalline material includes at least one color center having: an absorption in the region of 335±5 nm, an emission in the region of 750±5 nm and a 80±10 ns fluorescence lifetime.
34. A crystalline material comprising:
a base material comprising Al 2 O 3 ;
a first dopant comprising magnesium; and
a second dopant comprising carbon, wherein said crystalline material includes at least one color center having: an absorption in the region of 435±5 nm an emission in the region of 520±5 nm and a 9±3 ns fluorescence lifetime.
35. A crystalline material comprising:
a base material comprising Al 2 O 3 ;
a first dopant comprising magnesium; and
a second dopant comprising carbon, wherein said crystalline material includes at least one color center having: an absorption in the region of 335±5 nm, an emission in the region of 750±5 nm and a 80±10 ns lifetime.
36. A crystalline material comprising:
a base material comprising Al 2 O 3 ;
a first dopant comprising magnesium; and
a second dopant comprising carbon, wherein said crystalline material includes at least one color center having: an absorption in the region of 435±5 nm, an emission in the region of 520±5 nm and a 9±3 ns fluorescence lifetime and at least one color center having: an absorption in the region of 335±5 nm, an emission in the region of 750±5 nm and a 80±10 ns lifetime.
37. A crystalline material comprising:
a base material comprising Al 2 O 3 ;
a first dopant comprising magnesium;
a second dopant comprising carbon, and
a third dopant comprising hydrogen, wherein said crystalline material includes at least one color center having: an absorption in the region of 435±5 nm, an emission in the region of 520±5 nm and a 9±3 ns fluorescence lifetime and at least one color center having: an absorption in the region of 335±5 nm, an emission in the region 750±5 nm and a 80±10 ns lifetime.
38. A crystalline material comprising a base material comprising Al 2 O 3 and a dopant comprising Mg, wherein said crystalline material includes a plurality of aggregate oxygen vacancy defects.