Deuterium incorporated nitride
View Patent ↗A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is Si x L 2x , and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.
1. A method of forming a semiconductor structure, comprising:
forming an etch-stop layer comprising nitride, on a stack;
wherein the stack is on a semiconductor substrate,
the stack comprises (i) a gate layer,
the forming is by CVD with a gas comprising a first compound which is Si x L 2x , and a second compound comprising nitrogen and deuterium,
L is an amino group, and
X is 1.
2. The method of claim 1 , wherein the first compound is BTBAS, and the second compound is ammonia.
3. The method of claim 2 , wherein the forming is at a temperature of at most 700° C.
4. The method of claim 2 , wherein the forming is at a temperature of 500–650° C.
5. The method of claim 2 , wherein
the gate layer comprises a P + region and an N + region,
the P + and N + regions are separated by a region which is on an isolation region of the substrate having a width of at most 0.4 microns, and
the forming is carried out at a temperature and for a time that does not result in substantial diffusion between the P + region and the N + region.
6. The method of claim 2 , wherein
the stack further comprises (ii) a metallic layer, on the gate layer, and
the gate layer comprises silicon.
7. The method of claim 2 , further comprising forming a dielectric layer comprising phosphosilicate glass, on the etch-stop layer.
8. A method of making a semiconductor device, comprising:
forming a semiconductor structure by the method of claim 2 , and
forming a semiconductor device from the semiconductor structure.
9. A method of making an electronic device, comprising:
forming a semiconductor device by the method of claim 8 , and
forming an electronic device comprising the semiconductor device.
10. A method of forming a semiconductor structure, comprising:
forming an etch-stop layer comprising nitride, on a stack at a temperature of at most 700° C.;
simultaneously incorporating deuterium into a semiconductor substrate; and
forming a dielectric layer at a temperature of at most 700° C., on the etch-stop layer;
wherein the stack is on the semiconductor substrate, and
the stack comprises (i) a gate layer.
11. The method of claim 10 , wherein the forming is at a temperature of 500–650° C.
12. The method of claim 10 , wherein
the stack further comprises (ii) a metallic layer, on the gate layer, and
the gate layer comprises silicon.
13. The method of claim 10 , wherein
the gate layer comprises a P + region and an N + region,
the P + and N + regions are separated by a region which is on an isolation region of the substrate having a width of at most 0.4 microns, and
the forming of the etch-stop layer and the forming of the dielectric layer are carried out at a temperature and for a time that does not result in substantial diffusion between the P + region and the N + region.
14. A method of making a semiconductor device, comprising:
forming a semiconductor structure by the method of claim 10 , and
forming a semiconductor device from the semiconductor structure.
15. A method of making an electronic device, comprising:
forming a semiconductor device by the method of claim 14 , and
forming an electronic device comprising the semiconductor device.