Semiconductor device and manufacturing method thereof
View Patent ↗Some of the members constituting a semiconductor element are formed from α-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from α-Si. Thus, a semiconductor device that is achieved without requiring a great number of manufacturing steps such as film formation and etching, facilitates control of the individual steps and assures reliable electrical connection between the members and a method of manufacturing such a semiconductor device are provided.
1. A semiconductor device comprising:
a plurality of substantially solid contact plugs formed in an interlayer film and each including a projection portion that extends out from the interlayer film, the contact plugs being βSi; and
hemispherical polysilicon grains formed over an entirely of the projecting portions of at least some of the contact plugs.
2. A semiconductor device according to claim 1 , wherein the at least some of the contact plug is selected to be utilized as capacitor electrodes.
3. A semiconductor device according to claim 1 , wherein the at least some of the contact plugs having the hemispherical polysilicon grains thereon and utilized as the capacitor electrodes hold a different quantity of electrical charge than other contact plugs utilized as capacitor electrodes that do not have the hemispherical polysilicon grains thereon.
4. A semiconductor device according to claim 3 , wherein the at least some of the contact plugs having the hemispherical polysilicon grains thereon and utilized as the capacitor electrodes hold a different quantity of electrical charge than other contact plugs utilized as capacitor electrodes that do not have the hemispherical poylsilicon grains thereon.
5. A semiconductor device as recited in claim 1 , wherein the α-Si includes phosophorus in an amount of 1×10 20 cm −3 or less.