Method for manufacturing semiconductor integrated circuit
View Patent ↗A method for manufacturing a semiconductor integrated circuit includes steps of forming a semiconductor element on a semiconductor substrate and separating only a function layer including the semiconductor element, which is a surface layer of the semiconductor substrate, from the semiconductor substrate. The semiconductor element is preferably a compound semiconductor device including at least one of a light emitting diode, a vertical cavity surface emitting laserdiode, a photodiode, a high electron mobility transistor, an inductor, a capacitor, a resistor, and a heterojunction bipolar transistor.
1. A method for manufacturing a semiconductor integrated circuit, comprising:
forming a function layer on a sacrificial layer disposed on a semiconductor substrate;
forming semiconductor elements on the function layer; and
forming separation grooves which separate the semiconductor elements from each other in the function layer, so as to reach the semiconductor substrate through the sacrificial layer; and
separating the function layer including the semiconductor elements from the semiconductor substrate.
2. A method for manufacturing a semiconductor integrated circuit according to claim 1 ,
each of the semiconductor elements being a compound semiconductor device including at least one of a light emitting diode, a vertical cavity surface emitting laserdiode, a photodiode, a high electron mobility transistor, an inductor, a capacitor, a resistor, and a heterojunction bipolar transistor.
3. The method for manufacturing a semiconductor integrated circuit according to claim 1 ,
the semiconductor element being a silicon semiconductor device including at least one of an integrated circuit, a photodiode, a transistor, and a diode.
4. A method for manufacturing a semiconductor integrated circuit according to claim 1 ,
the function layer being separated from the semiconductor substrate by etching the sacrificial layer.
5. The method for manufacturing a semiconductor integrated circuit according to claim 4 ,
the semiconductor substrate comprising a gallium-arsenic compound semiconductor, and
the sacrificial layer comprising an aluminum-arsenic compound semiconductor.
6. The method for manufacturing a semiconductor integrated circuit according to claim 4 ,
the semiconductor substrate being formed as a Silicon-On-Insulator substrate; and
the sacrificial layer comprising being form as a silicon oxide membrane.
7. The method for manufacturing a semiconductor integrated circuit according to claim 4 ,
the function layer being separated from the semiconductor substrate by using the separation grooves and etching the sacrificial layer.
8. The method for manufacturing a semiconductor integrated circuit according to claim 7 , the separation grooves being formed by using a dry etching process or wet etching process.
9. The method for manufacturing a semiconductor integrated circuit according to claim 4 , the sacrificial layer being etched using low concentration hydrochloric acid, hydrogen fluoride, or buffered hydrogen fluoride.
10. A method for manufacturing a semiconductor integrated circuit, comprising:
forming a function layer on a sacrificial layer disposed on a semiconductor
forming semiconductor elements on the function layer;
forming separation grooves which separate the semiconductor elements from each other in the function layer so as to reach the semiconductor substrate through the sacrificial layer;
attaching a film member on a surface of the function layer on which the semiconductor elements are formed; and
separating the function layer including the semiconductor elements from the semiconductor substrate.
11. The method for manufacturing a semiconductor integrated circuit according to claim 10 , further comprising:
joining the function layer attached to the film member onto a substrate comprising silicon.
12. A method for manufacturing a semiconductor integrated circuit, comprising:
forming a function layer on a sacrificial layer that is disposed on a semiconductor substrate and is to be removed by an etching process;
forming semiconductor elements on the function layer;
forming separation grooves in the function layer, each of the separation grooves having a depth sufficient to reach the semiconductor substrate through the sacrificial layer;
attaching a film member on a surface of the function layer; and
separating the semiconductor elements from the semiconductor substrate by supplying an etching solution on the separation grooves to etch the sacrificial layer.
13. The method for manufacturing a semiconductor integrated circuit according to claim 12 , further comprising:
joining the semiconductor elements attached to the film member to a substrate differing from the semiconductor substrate.
14. The method for manufacturing a semiconductor integrated circuit according to claim 13 , further comprising:
connecting the semiconductor elements joined to the substrate to a circuit formed on the substrate.