Magnetic memory array with an improved world line configuration
View Patent ↗A magnetic memory array with an improved word line configuration is provided. In some embodiments, the magnetic memory array may be adapted to selectively supply voltage from a single source line to one or more transistors arranged within a first row of the magnetic memory array and to one or more transistors arranged within a second row of the magnetic memory array. In addition or alternatively, the magnetic memory array may be configured to enable current flow along a single current path through a magnetic junction and along multiple paths extending from the single current path to a plurality of transistors. In some embodiments, the plurality of transistors may be formed from a contiguous conductive structure comprising the word line. In some cases, the word line may be configured to include at least two transistors that share a common diffusion region.
1. A circuit, comprising:
a magnetic memory array; and
a voltage source line arranged between a first row of memory cells of the magnetic memory array and a second row of memory cells of the magnetic memory array, wherein the circuit is adapted to selectively supply voltage from the voltage source line to gates of one or more transistors arranged within the first row of memory cells of and to gates of one or more transistors arranged within the second row memory cells.
2. The circuit of claim 1 , wherein the voltage source line is one of a plurality of voltage source lines separately arranged between every other row within the magnetic memory array.
3. The circuit of claim 1 , further adapted to selectively supply voltage from the voltage source line to gates of one or more transistors arranged within other rows of the magnetic memory array.
4. The circuit of claim 1 , further comprising:
a first selection device adapted to direct the voltage from the voltage source line to the gates of the one or more transistors within the first row;
a second selection device adapted to direct the voltage from the voltage source line to the gates or the one or more transistors within the second row; and
a control line adapted to selectively activate the first selection device and the second selection device.
5. The circuit of claim 4 , further comprising a second control line adapted to selectively activate a third selection device of the magnetic memory array to direct another voltage from a different voltage source line to gates of one or more transistors arranged within a third row of the magnetic memory array.
6. The circuit of claim 4 , wherein the one or more transistors within the first row comprise a portion of a plurality of transistors arranged along the first row, and wherein the circuit further comprises a third control line adapted to activate a fourth selection device of the magnetic memory array to direct the voltage from the voltage source line to gates of one or more transistors within another portion of the plurality of transistors arranged along the first row.
7. The circuit of claim 1 , wherein at least two of the transistors within the first row share a common diffusion region.
8. A magnetic random access memory array comprising a memory cell with a word line having gates of a first transistor, a second transistor, and a third transistor that share a common diffusion region, wherein the gates of the first and second transistors are arranged such that their widths are respectively aligned with a length and a width of the magnetic random access memory array.
9. The magnetic random access memory array of claim 8 , wherein the word line further comprises a gate of a fourth transistor that shares the common diffusion region.
10. The magnetic random access memory array of claim 9 , wherein the gate of the first transistor is laterally spaced from the gate of the second transistor by the common diffusion region.
11. The magnetic random access memory array of claim 8 , wherein the word line further comprises a gate of a third transistor laterally spaced from the gate of the first transistor by a length of the gate of the second transistor.
12. The magnetic random access memory array of claim 11 , wherein the second transistor is configured to isolate the first and third transistors from each other.
13. The magnetic random access memory array of claim 11 , wherein the second transistor is configured to reduce the parasitic resistance variation between the first and third transistors.
14. A magnetic random access memory (MRAM) array, comprising:
a magnetic cell junction; and
a plurality of transistors coupled to the magnetic cell junction, wherein the MRAM array is configured to enable current flow along a single current path through the magnetic cell junction and along multiple current paths extending from the single current path to the plurality of transistors.
15. The magnetic random access memory array of claim 14 , wherein gates of the plurality of transistors are arranged along a contiguous conductive structure.
16. The magnetic random access memory array of claim 14 , wherein the plurality of transistors comprises an equilibrium transistor configured to reduce the parasitic resistance variation between at least two transistors of the plurality of transistors.
17. The magnetic random access memory array of claim 14 , wherein the plurality of transistors comprises an isolation transistor configured to isolate memory cells of the magnetic random access memory array.
18. The magnetic random access memory array of claim 14 , further adapted to selectively supply voltage from a single source line to gates of the plurality of transistors and to gates or one or more transistors coupled to a different magnetic cell junction which is arranged along a different row of the MRAM array.