Method of manufacturing semiconductor apparatus
View Patent ↗In an electric characteristic testing process corresponding to a process of the semiconductor apparatus manufacturing processes, in order to test a large area of the electrode pad of the body to be tested in a lump, an electric characteristic testing is performed by pressing a testing structure provided with electrically independent projections having a number equal to a number of conductor portions to be tested formed on an area to be tested of a body to be tested to the body to be tested.
1. A test apparatus of a semiconductor apparatus, comprising:
a substrate provided with a projection formed on one main surface of said substrate so as to be electrically connectable to an electrode of a tested semiconductor apparatus, wherein said substrate is made of silicon;
a pad formed on a back surface side of said one main surface; and
a conductive member electrically connecting said projection and said pad,
wherein a region of said substrate where the projection is formed is deformed more easily than a region apart therefrom.
2. A test apparatus of a semiconductor apparatus according to claim 1 , wherein a substrate thickness of the region where said projection is formed is thinner than a substrate thickness of a region apart therefrom.
3. A test apparatus of a semiconductor apparatus according to claim 1 , wherein a number of tested conductor portions formed in a tested range of said substrate of said tested semiconductor apparatus is equal to a number of said projections which are formed in said substrate of said test apparatus and electrically independent.
4. A test apparatus of a semiconductor apparatus according to claim 1 , wherein said substrate is provided with a plurality of said projections, and a through groove crossing a line connecting two adjacent projections is formed in said substrate.
5. A test apparatus of a semiconductor apparatus according to claim 1 , wherein said one main surface of said substrate is provided with a region which is in contact with said tested semiconductor apparatus, in addition to said projection being in contact with said tested semiconductor apparatus, at a time of testing said tested semiconductor apparatus.
6. A test apparatus of a semiconductor apparatus according to claim 2 , wherein said region of said substrate where the projection is formed is constituted by a beam.
7. A test apparatus of a semiconductor apparatus, comprising:
a substrate provided with a projection formed on one main surface of said substrate so as to be electrically connectable to an electrode of a tested semiconductor apparatus;
a pad formed on a back surface side of said one main surface; and
a conductive member electrically connecting said projection and said pad,
wherein a region of said substrate where the projection is formed is deformed more easily than a region apart therefrom; and further comprising:
a second plate member arranged so as to oppose to the surface of said substrate where the pad is formed, and provided with a wire electrically communicated with said pad; and
a third plate member arranged between said substrate and said second plate member,
wherein said third plate member is formed of a material having a Young's modulus of 60 GPa or more, and has a thickness of 100 μm or more.
8. A test apparatus of a semiconductor apparatus, comprising:
a substrate provided with a projection formed on one main surface of said substrate so as to be electrically connectable to an electrode of a tested semiconductor apparatus, wherein said substrate is made of silicon;
a pad formed on a back surface side of said one main surface; and
a conductive member electrically connecting said projection and said pad,
wherein a region of said substrate where the projection is formed is deformed more easily than a region apart therefrom; and
further comprising:
a second plate member arranged so as to oppose to the surface of said substrate where the pad is formed, and provided with a wire electrically communicated with said pad; and
a third plate member arranged between said substrate and said second plate member,
wherein said third plate member is formed of a material having a Young's modulus of 60 GPa or more, and has a thickness of 100 μm or more.
9. A test apparatus of a semiconductor apparatus according to claim 8 , wherein said projection and said third plate member are arranged via a space.
10. A test apparatus of a semiconductor apparatus, comprising:
a substrate provided with a projection formed on one main surface of said substrate so as to be electrically connectable to an electrode of a tested semiconductor apparatus, wherein said substrate is made of silicon;
a pad formed on a back surface side of said one main surface; and
a conductive member electrically connecting said projection and said pad,
wherein a region of said substrate where the projection is formed is deformed more easily than a region apart therefrom, and
wherein a plurality of said substrates are provided substantially within one surface.
11. A test apparatus of a semiconductor apparatus, comprising:
a substrate provided with a projection formed on one main surface of said substrate so as to be electrically connectable to an electrode of a tested semiconductor apparatus, wherein said substrate is made of silicon, and wherein said projection is made of silicon integrated with said substrate, and has a conductive coat thereon;
a pad formed on a back surface side of said one main surface; and
a conductive member electrically connecting said projection and said pad,
wherein a region of said substrate where the projection is formed is deformed more easily than a region apart therefrom.