IP Library Granted Patent US 6,897,480
Granted Patent B2
US 6,897,480 · App. 10/327,086 · Granted May 24, 2005

Active matrix organic electroluminescence device and method of manufacturing the same

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Quick Facts
Patent No.
US 6,897,480
App. No.
10/327,086
Granted
May 24, 2005
Kind
B2
Abstract

An active matrix organic electroluminescence device includes a substrate, a gate line on the substrate, a data line crossing the gate line, a power line parallel with the gate line, a switching thin film transistor electrically connected to the gate line and the data line, wherein the switching thin film transistor includes a first gate electrode, a first active layer, and first source and drain electrodes, a driving thin film transistor electrically connected to the first drain electrode, wherein the driving thin film transistor includes a second gate electrode, a second active layer, and second source and drain electrodes, and a luminescent diode connected to the driving thin film transistor and the power line.

Claims (35)

1. An active matrix organic electroluminescence device, comprising:

a substrate;

a gate line on the substrate;

a data line crossing the gate line;

a power line parallel with the gate line;

a power line on the substrate;

a switching thin film transistor electrically connected to the gate line and the data line, the switching thin film transistor including a first gate electrode, a first active layer, and first source and drain electrodes;

a driving thin film transistor electrically connected to the first drain electrode, the driving thin film transistor including a second gate electrode, a second active layer, and second source and drain electrodes; and

a luminescent diode connected to the driving thin film transistor and the power line

wherein the luminescent diode includes a first electrode connected to the second drain electrode of the driving thin film transistor; a second electrode connected to the power line; and an emissive layer disposed between the first and second electrodes, and

wherein work function of the first electrode is smaller than work function of the second electrode.

2. The device according to claim 1 , wherein the second active layer includes n-type amorphous silicon.

3. An active matrix organic electroluminescence device, comprising:

a substrate;

a gate line on the substrate;

a data line crossing the gate line;

a power line parallel with the gate line;

a power line on the substrate;

a switching thin film transistor electrically connected to the gate line and the data line, the switching thin film transistor including a first gate electrode, a first active layer, and first source and drain electrodes;

a driving thin film transistor electrically connected to the first drain electrode, the driving thin film transistor including a second gate electrode, a second active layer, and second source and drain electrodes; and

a luminescent diode connected to the driving thin film transistor and the power line,

wherein the luminescent diode further includes an electron transporting layer and a hole transporting layer, the electron transporting layer disposed between the first electrode and the emissive layer, the hole transporting layer disposed between the second electrode and the emissive layer.

4. The device according to claim 3 , wherein the electron transporting layer and hole transporting layer are organic.

5. The device according to claim 1 , wherein the second electrode is transparent.

6. The device according to claim 1 , wherein the first electrode includes one of calcium, aluminum, and magnesium.

7. The device according to claim 1 , wherein the second electrode includes indium-tin-oxide.

8. The device according to claim 1 , further comprising a storage capacitor connected to the second gate electrode and the second source electrode of the driving thin film transistor.

9. An active matrix organic electroluminescence device, comprising:

a substrate;

a gate line on the substrate;

a data line crossing the gate line;

a power line on the substrate;

a switching thin film transistor electrically connected to the gate line and the data line, the switching thin film transistor including a first gate electrode, a first active layer, and first source and drain electrodes;

a driving thin film transistor electrically connected to the first drain electrode, the driving thin film transistor including a second gate electrode, a second active layer, and second source and drain electrodes; and

a luminescent diode connected to the driving thin film transistor and the power line, wherein the luminescent diode includes a first electrode connected to the second drain electrode of the driving thin film transistor, a second electrode connected to the power line and an emissive layer disposed between the first and second electrodes, and wherein work function of the first electrode is smaller than work function of the second electrode.

Assignments (2)
CHANGE OF NAME Recorded Oct 17, 2008
From: LG.PHILIPS LCD CO., LTD.
To: LG DISPLAY CO., LTD.
Reel/Frame 021763/0177 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 24, 2002
From: PARK, JAE YONG
To: LG.PHILIPS LCD CO., LTD.
Reel/Frame 013609/0534 →