IP Library › Granted Patent US 6,897,136
Granted Patent B2
US 6,897,136 · App. 10/329,097 · Granted May 24, 2005

Method for forming fuse in semiconductor device

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Quick Facts
Patent No.
US 6,897,136
App. No.
10/329,097
Granted
May 24, 2005
Kind
B2
Abstract

A method for forming a fuse in a semiconductor device comprising: forming a second insulating layer on a first insulating layer; etching the second insulating layer to form a trench; depositing a first metal layer on the trench and the second insulating layer; performing a chemical-mechanical polishing (CMP) process on the first metal layer to form the first metal wiring; forming a third insulating layer on the first metal wiring and the second insulating layer; etching the third insulating layer to form a second trench; depositing a barrier layer and a second metal layer on the second trench and the third insulating layer, and performing a CMP process on the barrier layer and the third insulating layer to form the second metal wiring; depositing a buffer layer on the second metal wiring and the third insulating layer; forming a passivation layer on the buffer layer; and etching the passivation layer.

Claims (14)

1. A method for forming a fuse in a semiconductor device, comprising the steps of:

forming a second insulating layer on a first insulating layer and etching the second insulating layer by using a first mask pattern to form a trench for a first metal wiring.

depositing a first metal wiring layer on the second insulating layer and the trench for the first metal wiring, and performing a chemical-mechanical polishing process on the first metal wiring layer to form the first metal wiring in a region intended to be used as a fuse;

forming a third insulating layer on the first metal wiring and the second insulating layer, and etching the third insulating layer by using a second mask pattern to form a trench for a second metal wiring in a region intended to be connected to a lower layer by means of a contact;

sequentially depositing a barrier layer and a second metal wiring layer on the third insulating layer and the trench for the second metal wiring, and performing a CMP process on the barrier layer and the third insulating layer to form the second metal wiring in a region intended to be connected to a lower layer by means of a contact;

depositing a buffer layer on the second metal wiring and the third insulating layer, the buffer layer being intended to act as an etch buffer layer at the time of an etching in order to open a fuse box; and

forming a passivation layer on the buffer layer, and etching the passivation layer to a desired thickness by using a third mask pattern, the etching of the passivation layer being performed so that the first metal wiring is not exposed.

2. The method for forming a fuse according to claim 1 , wherein the first metal layer is made of Ti or Ti/TiN.

3. The method for forming a fuse according to claim 1 , wherein the second metal layer is made of aluminum (Al) or copper (Cu).

4. The method for forming a fuse according to claim 1 , wherein the first metal wiring is formed only in a region intended to be used as a fuse.

5. The method for forming a fuse according to claim 1 , wherein the second metal wiring is formed only in a region intended to be connected to the lower layer by means of the contact, without forming a metal wiring intended to be used as a fuse.

6. The method for forming a fuse according to claim 1 , wherein the first mask pattern and the second mask pattern are overlapped to a certain width.

7. The method for forming a fuse according to claim 1 , wherein the third mask pattern is positioned at a desired interval apart from the second mask pattern, in consideration of misalignment of the masks in the masking process.

8. The method for forming a fuse according to claim 1 , wherein the buffer layer is made of nitride.