IP Library Granted Patent US 6,867,467
Granted Patent B2
US 6,867,467 · App. 10/329,390 · Granted Mar 15, 2005

Capacitive micro-electro-mechanical switch and method of manufacturing the same

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Quick Facts
Patent No.
US 6,867,467
App. No.
10/329,390
Granted
Mar 15, 2005
Kind
B2
Abstract

The present invention relates to a capacitive micro-electro-mechanical switch and method of manufacturing the same. In the capacitive micro-electro-mechanical switch for use in the radio frequency (RF) and the microwave driven by the electrostatic force, a capacitor of a 3-dimensional structure is formed on a signal transmission line. An ON capacitance is increased without increasing an capacitor area while preventing an increase in an OFF capacitance using the capacitor. Thus, an ON/OFF capacitance ratio of the capacitive micro-electro-mechanical switch can be increased and insertion loss and isolation characteristic could be improved.

Claims (23)

1. A capacitive micro-electro-mechanical switch, comprising:

a first line form on a substrate;

an insulating layer having a hole through which a given region of the first line is exposed;

a capacitor of a 3-dimensional structure formed in the hole on the first line;

a metal post formed, on the insulating layer, in a direction vertical to the first lines from the capacitor; and

a second line spaced apart from the top of the capacitor by a given gap, wherein a portion of the second line is overlapped with the capacitor and an edge of the second line is fixed to the metal post in a direction vertical to the first line.

2. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein a plurality of holes are formed in the insulating layer, and wherein the capacitor has a stack structure of an assistant bottom electrode, a dielectric film and an assistant top electrode and each of the plurality of holes has shape with a 3-dimensional structure.

3. The capacitive micro-electro-mechanical switch as claimed in claim 2 , wherein the capacitor includes unit capacitors formed in every hole and the unit capacitors are in parallel connected one another.

4. The capacitive micro-electro-mechanical switch as claimed in claim 2 , wherein the assistant bottom electrode and the assistant top electrode are made of any one of Au, Al, W, Cu, TiN and Pt.

5. The capacitive micro-electro-mechanical switch as claimed in claim 2 , wherein the dielectric film is made of any one of Si 3 N 4 , Ta 2 O 5 , SrTiO 3 and Ba 0.5 Sr 0.5 TiO 3 .

6. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the capacitor has a 3-dimensional structure of a multi-layered shape including:

an assistant bottom electrode having multi-layered electrode layers connected one another at one edge of the first line and electrically connected to the first line;

an assistant top electrode having multi-layered electrode layers connected one another at the other edge of the first line, wherein the uppermost layer of the assistant top electrode is exposed; and

a dielectric film formed between the assistant bottom electrode and the assistant top electrode.

7. The capacitive micro-electro-mechanical switch as claimed in claim 1 , further comprising an adhesive layer between the substrate and the first line.

8. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the insulating layer is made of any one of silicate glass, PSG and BPSG.

9. The capacitive micro-electro-mechanical switch as claimed in claim 1 , further comprising a conductive contact pad on the capacitor.

10. The capacitive micro-electro-mechanical switch as claimed in claim 9 , wherein the contact pad is made of a noble metal or a conductive oxide layer.

11. The capacitive micro-electro-mechanical switch as claimed in claim 1 , further comprising ground lines on the substrate with the first line intervened, and wherein the metal post is electrically connected to the ground lines.

12. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the metal post is formed only 1 in number and is connected to the second line in a cantilever shape.

13. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the metal post is formed at both sides of the capacitor and both ends of the second line are fixed to the metal post.

14. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the metal post is made of any one of Au, Al, W, Cu, TiN, Pt and Ni.

15. The capacitive micro-electro-mechanical switch as claimed in claim 1 , wherein the second line is made of any one of Au, Al, W, Cu, TiN, Pt and Ni.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2012
From: IPG ELECTRONICS 502 LIMITED; ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
To: PENDRAGON ELECTRONICS AND TELECOMMUNICATIONS RESEARCH LLC
Reel/Frame 028611/0643 →
ASSIGNMENT OF ONE HALF (1/2) OF ALL OF ASSIGNORS' RIGHT, TITLE AND INTEREST Recorded Nov 3, 2009
From: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
To: IPG ELECTRONICS 502 LIMITED
Reel/Frame 023456/0363 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2002
From: YANG, WOO SEOK; KANG, SUNG WEON; KIM, YUN TAE; JUNG, SUNG HAE
To: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Reel/Frame 013622/0408 →