Semiconductor device and method for manufacturing
View Patent ↗A semiconductor device and method has trenches for raising reliability. An electrode pad, with a protective film and an interlayer film which form an opening on top, are on a substrate. A rewiring pattern in contact with the electrode pad at this opening is on top of the interlayer film. A trench is etched outside the rewiring pattern. A bump is formed on top of the rewiring pattern. The rewiring pattern and the trench are covered by a sealing film that that exposes the upper end of the bump. An external terminal is formed on top of the bump. The trenches increase contact area and adhesion between the covering film and the sealing film. The rougher the surface of the trench the better the adhesion, which makes the sealing film stick better and the semiconductor device more reliable.
1. A semiconductor device, comprising:
a substrate having a peripheral portion and a central portion inward of the peripheral portion;
a plurality of electrode pads disposed in the peripheral portion of the substrate;
an interlayer film disposed over the central and peripheral portions of the substrate, the interlayer film having openings over the peripheral portion of the substrate to expose the electrode pads, the interlayer film additionally having a first region and a second region over the central portion of the substrate, the first region having a substantially uniform thickness;
a redistribution conductor having an outer end that is connected to one of the electrode pads and an inner end that is disposed on the first region of the interlayer film;
a bump on the redistribution conductor adjacent its inner end; and
a sealing film that is disposed over the interlayer film but exposes an upper end of the bump,
wherein the second region of the interlayer film has a trench that passes adjacent the bump and is spaced apart from all of the openings over the peripheral portion of the substrate, and
wherein the sealing film contacts the trench and is thicker over the trench than over the first region of the interlayer film.
2. The semiconductor device according to claim 1 , wherein the trench has a trench edge and the inner end of the redistribution conductor is substantially aligned with the trench edge.