Binderless storage phosphor screen with needle shaped crystals

1. Method for producing a binderless CsBr:Eu storage phosphor screen comprising steps of:

combining CsBr and EuOBr as phosphor precursors for an alkali metal storage phosphor; and

vacuum depositing said combination of phosphor precursors on a substrate, wherein during said step of vacuum depositing said substrate is kept at a temperature T, such that 50° C.≦T≦300° C. and said vacuum deposition proceeds in an Ar-atmosphere with an Ar-pressure of at most 3 Pa; and

wherein said storage phosphor screen shows an XRD-spectrum with a (100) diffraction line having an intensity I 100 and a (110) diffraction line having an intensity I 110 , so that I 100 /I 110 ≧1, when said XRD-spectrum is measured according to TEST A.

2. A method according to claim 1 , wherein said temperature of said substrate T is such that 90° C.≦T≦200° C.

3. The method according to claim 1 , wherein said combining phosphor precursors for an alkali metal storage phosphor comprises:

preparing a mixture by combining CsBr with between 10 −3 and 5 mol % of EuOBr,

firing said mixture at a temperature above 450° C.,

cooling said mixture, and

recovering the CsBr:Eu phosphor from said mixture.

4. The method according to claim 1 , wherein said method of making said screen further comprises:

said CsBr is combined with between 10 −3 and 5 mol % of said EuOBr to provide a mixture, and

bringing said mixture into condition for vapor deposition.

5. A method of making a binderless CsBr:Eu storage phosphor screen comprising an alkali metal storage phosphor wherein said screen shows an XRD-spectrum with a (100) diffraction line having an intensity I 100 and a (110) diffraction line having an intensity I 110 , so that I 100 /I 110 ≧1, when said XRD-spectrum is measured according to TEST A, said method comprising applying binderless phosphor to a support by a method selected from the group consisting of physical vapor deposition, thermal vapor deposition, chemical vapor deposition, electron beam deposition, radio frequency deposition, and pulsed laser deposition; wherein said CsBr:Eu phosphor is made by:

preparing a mixture by combining CsBr with between 10 −3 and 5 mol % of EuOBr,

firing said mixture at a temperature above 450° C.,

cooling said mixture, and

recovering the CsBr:Eu phosphor from said mixture;

wherein the binderless phosphor is vacuum deposited in an inert gas atmosphere of argon gas at a pressure of less than 3.0 Pa, and a support temperature of from 50° C. to 300° C.

6. A method according to claim 5 , wherein I 100 /I 110 ≧5.

7. A method of making a binderless CsBr:Eu storage phosphor screen comprising an alkali metal storage phosphor wherein said screen shows an XRD-spectrum with a (100) diffraction line having an intensity I 100 and a (110) diffraction line having an intensity I 110 , so that I 100 /I 110 ≧1, when said XRD-spectrum is measured according to TEST A, said method comprising applying binderless phosphor to a support by a method selected from the group consisting of physical vapor deposition, thermal vapor deposition, chemical vapor deposition, electron beam deposition, radio frequency deposition, and pulsed laser deposition;

wherein the binderless phosphor is vacuum deposited in an inert gas atmosphere of argon gas at a pressure of less than 3.0 Pa, and a support temperature of more than 90° C. and up to 200° C., wherein said method of making said screen further comprises:

preparing a mixture by combining CsBr with between 10 −3 and 5 mol % of EuOBr,

bringing said mixture into condition for vapor deposition, and

depositing said mixture on said support.

8. A method of making a binderless CsBr:Eu storage phosphor screen comprising an alkali metal storage phosphor wherein said screen shows an XRD-spectrum with a (100) diffraction line having an intensity I 100 and a (110) diffraction line having an intensity I 110 , so that I 100 /I 110 ≧5, when said XRD-spectrum is measured according to TEST A, said method comprising applying binderless phosphor to a support by a method selected from the group consisting of physical vapor deposition, thermal vapor deposition, chemical vapor deposition, electron beam deposition, radio frequency deposition, and pulsed laser deposition;

wherein the binderless phosphor is vacuum deposited in an inert gas atmosphere of argon gas at a pressure of less than 3.0 Pa, and a support temperature of more than 90° C. and up to 200° C.; and wherein said CsBr:Eu phosphor is made by a method comprising:

preparing a mixture by combining CsBr with between 10 −3 and 5 mol % of EuOBr,

firing said mixture at a temperature above 450° C.,

cooling said mixture, and

recovering said CsBr:Eu phosphor from said mixture.

9. A method of making a binderless CsBr:Eu storage phosphor screen comprising an alkali metal storage phosphor wherein said screen shows an XRD-spectrum with a (100) diffraction line having an intensity I 100 and a (110) diffraction line having an intensity I 110 , so that I 100 /I 110 ≧5, when said XRD-spectrum is measured according to TEST A, said method comprising applying binderless phosphor to a support by a method selected from the group consisting of physical vapor deposition, thermal vapor deposition, chemical vapor deposition, electron beam deposition, radio frequency deposition, and pulsed laser deposition;

wherein the binderless phosphor is vacuum deposited in an inert gas atmosphere of argon gas at a pressure of less than 3.0 Pa, and a support temperature of more than 90° C. and up to 200° C.; and wherein said method of making said screen further comprises:

preparing a mixture by combining CsBr with between 10 −3 and 5 mol % of EuOBr,

bringing said mixture into condition for vapor deposition, and

depositing said mixture on said support.