Flat panel display device and method of forming passivation film in the flat panel display device

1. A method of forming a passivation film in a flat panel display device, comprising:

forming the flat panel display device on a substrate;

bringing the flat panel display device into a chamber in order to form the passivation film;

injecting precursors containing constituent elements of the passivation film into the chamber, the precursors including at least one of oxygen plasma, ammonia plasma, and nitrogen plasma; and

forming the passivation film of an inorganic insulating material at a temperature of 20 to about 220° C. through a surface chemical reaction between the precursors by plasma enhanced atomic layer deposition method.

2. The method as claimed in claim 1 , wherein the flat panel display device is an organic light-emitting device in which a first electrode, a light-emmitting layer and a second electrode are formed on the substrate, and wherein emitted light from the organic light-emitting device penetrate the substrate.

3. The method as claimed in claim 2 , wherein an organic insulating film and/or a metal film for passivation are/is added to the inorganic insulating film so that the total passivation film has a two layer structure, a three layer structure or a multi-layer structure, the organic insulating film and/or the metal film for passivation and the inorganic film are stacked by at least one time.

4. The method as claimed in claim 3 , wherein the organic insulating film is a thin (thermal chemical-vapor-deposition polymer) film.

5. The method as claimed in claim 1 , wherein the flat panel display device is an organic light-emitting device in which a first electrode, a light-emitting layer and a second electrode are formed on the substrate, and wherein the organic light-emitting device is emitted in a top emission mode.

6. The method as claimed in claim 5 , wherein an organic insulating film is added to the inorganic insulating film so that the total passivation film has a two layer structure or a multi-layer structure, in which the organic insulating film and the inorganic film are stacked by at least one time.

7. The method as claimed in claim 1 , wherein the inorganic insulating film is one of Al 2 O 3 ZnO, titanium oxide, tantalum oxide, ZrO 2 , HfO 2 , SiO 2 , Si 3 N 4 , AlN and AlON.

8. The method as claimed in claim 1 , wherein the substrate is a glass substrate or a plastic substrate.

9. The method as claimed in claim 1 , wherein the inorganic insulating film is formed using one of a remote plasma atomic layer deposition method and a direct plasma atomic layer deposition method.

10. The method as claimed in claim 1 , wherein the inorganic insulating film is Al 2 O 3 , the precursors include aluminum precursor and oxygen plasma the aluminum precursor is trimethylaluminum or triethylaluminum.

11. A method forming a passivation film in a flat panel display device, comprising:

forming the flat panel display device on a substrate;

bringing the flat panel display device into a chamber in order to form the passivation film;

injecting precursors containing constituent elements of the passivation film into the chamber; and

forming the passivation film of an inorganic insulating material at a temperature of 20 to 220° C. through a surface chemical reaction between the precursors by an atomic layer deposition method,

wherein the inorganic insulating film is aluminum nitride, the precursors include an aluminum precursor and a precursor of nitrogen, the aluminum precursor is trimethylaluminum or triethylaluminum, and the nitrogen precursor is an ammonia plasma or nitrogen plasma.

12. A method of forming a passivation film onto a flexible substrate comprising:

bringing a substrate into a chamber in order to form a passivation film;

injecting precursors containing elements constituting the passivation film into the chamber;

forming the passivation film of an inorganic insulating material at a temperature of 20 to about 220° C. through a surface chemical reaction between the precursors by an atomic layer deposition method; and

manufacturing the flat panel display device on the substrate in which the passivation film is formed on the entire surfaces of the upper side, a lower side and lateral sides, or the surfaces including a portion of them.

13. The method as claimed in claim 12 , wherein the flat panel display device is an organic light-emitting device in which a first electrode, a light-emitting layer and a second electrode are formed on the substrate, wherein emitted light from the organic light-emitting device penetrate the substrate, and wherein an organic insulating film is added to the inorganic insulating film so that the total passivation film has a two layer structure or a multi-layer structure, in which the organic insulating film and the inorganic film are stacked by at least one time.

14. The method as claimed in claim 12 , wherein the flat panel display device is an organic light-emitting device in which a first electrode, a light-emitting layer and a second electrode are formed on the substrate, wherein the organic light-emitting device is emitted in a top emission mode, and wherein an organic insulating film and/or a metal film for passivation are/is added to the inorganic insulating film so that the total passivation film has a two layer structure, a three layer structure or a multi-layer structure, the organic insulating film and/or the metal film for passivation and the inorganic film are stacked by at least one time.

15. The method as claimed in claim 12 , wherein the inorganic insulating material is Al 2 O 3 , ZnO, titanium oxide, ZrO 2 , HfO 2 , SiO 2 , tantalum oxide SiO 3 N 4 , AlN or AlON.

16. The method as claimed in claim 12 , wherein the organic insulating film is a thin (thermal chemical-vapor-deposition polymer) film.

17. The method as claimed in claim 12 , wherein the substrate is a glass substrate or a plastic substrate.

18. The method as claimed in claim 12 , wherein the insulating film is formed using one of a traveling wave reactor deposition method, a remote plasma atomic layer deposition method and a direct plasma atomic layer deposition method.

19. The method as claimed in claim 12 , wherein the inorganic insulating film is Al 2 O 3 , the precursors include aluminum precursor and oxygen precursor, the aluminum precursor is trimethylaluminum or triethylaluminum, and the oxygen precursor is one of water, methanol, ethanol, isopropyl alcohol, ozone, oxygen plasma or water plasma.

20. The method as claimed in claim 12 , wherein the inorganic insulating film is aluminum nitride, the precursors include an aluminum precursor and a precursor of nitrogen, the aluminum precursor is trimethylaluminum or triethylaluminum, and the nitrogen precursor is an ammonia plasma or nitrogen plasma.