Solid state detector
View Patent ↗Disclosed is a solid state detector which comprises a photo-conductive layer for generating charges upon irradiation of recording light and a substrate laminated to the photo-conductive layer, the substrate having a thermal expansion coefficient different from that of the photo-conductive layer. The solid state detector prevents deformation and breakdowns due to temperature changes of environments. Specifically, the solid state detector comprises a photo-conductive layer and a substrate laminated to the photo-conductive layer, the substrate having a thermal expansion coefficient smaller than that of the photo-conductive layer. In the solid state detector a deformation suppression layer, which has a thermal expansion coefficient smaller than that of the photo-conductive layer and suppresses deformation resulting from thermal expansion of the photo-conductive layer and the substrate, is laminated on a side of the photo-conductive layer opposite from the side of the substrate.
1. A solid state detector, comprising:
a photo-conductive layer generating charges upon irradiation of recording electromagnetic waves, which hold image information; and
a substrate laminated to the photo-conductive layer, the substrate having a thermal expansion coefficient smaller than that of the photo-conductive layer,
wherein a deformation suppression layer, which is not an electrode, has a thermal expansion coefficient smaller than that of the photo-conductive layer, and suppresses deformation resulting from thermal expansion of the photo-conductive layer and the substrate, is laminated on a side of the photo-conductive layer opposite from the side of the substrate.
2. The solid state detector according to claim 1 , wherein the substrate is made of glass, the photo-conductive layer is made of a-Se, and the deformation suppression layer is made of one of carbon fiber and aluminum.
3. The solid-state detector according to claim 1 , wherein the deformation suppression layer is laminated directly to the photo-conductive layer on a side of the photo-conductive layer opposite from the side of the substrate.
4. The solid state detector according to claim 1 , wherein the deformation suppression layer has a thermal expansion coefficient smaller than that of the photo-conductive layer and the substrate.
5. A solid state detector, comprising
a photo-conversion layer for emitting light in accordance with image information upon irradiation of recording electromagnetic waves, which hold the image information; and
a substrate laminated to the photo-conversion layer, the substrate having a thermal expansion coefficient smaller than that of the photo-conversion layer,
wherein a deformation suppression layer, which has a thermal expansion coefficient smaller than that of the photo-conversion layer and suppresses deformation resulting from thermal expansion of the photo-conversion layer and the substrate, is laminated on a side of the photo-conversion layer opposite from the side of the substrate.
6. The solid state detector according to claim 5 , wherein the substrate is made of glass, the photo-conversion layer is made of one of GOS and CsI:I , and the deformation suppression layer is made of carbon fiber.
7. The solid state detector according to claim 5 , wherein the substrate is made of glass, the photo-conversion layer is made of one of GOS and CsI:I, and the deformation suppression layer is made of aluminum.
8. The solid-state detector according to claim 5 , wherein the substrate is laminated directly on the photo-conductive layer and the deformation suppression layer is laminated directly to the photo-conductive layer on a side of the photo-conductive layer opposite from the side of the substrate.
9. The solid state detector according to claim 5 , wherein the deformation suppression layer has a thermal expansion coefficient smaller than that of the photo-conductive layer and the substrate.