Interconnection structure and interconnection structure formation method
View Patent ↗An insulating film covering a Cu interconnection is formed. A contact hole which partially exposes the surface of the Cu interconnection is formed in the insulating film. A series of steps (steps (a) to (d)) including (a) a step of continuously supplying WF 6 gas for a predetermined time, (b) a step of continuously exhausting the WF 6 gas atmosphere for a predetermined time, (c) a step of continuously supplying SiH 4 gas for a predetermined time, and (d) a step of continuously exhausting the SiH 4 gas atmosphere for a predetermined time, is repeatedly executed to form W nuclei in the contact hole. Then, a W film is buried into the contact hole. This interconnection structure formation method can reliably bury the W film into the contact hole while preventing Cu elution from the Cu interconnection to the W plug.
1. An interconnection structure comprising:
a lower interconnection made of a material containing at least copper;
an insulating film formed on said lower interconnection and having a hole which opens into said lower interconnection;
a refractory metal plug which fills only said hole and is electrically connected to said lower interconnection without elution from the material of said lower interconnection to said refractory metal plug, said refractory metal plug including refractory metal material nuclei and refractory metal material body which is formed in a step different from a step of forming said refractory metal material nuclei; and
an upper interconnection made of material containing at least aluminum, and electrically connected to said lower interconnection on and via said refractory metal plug.
2. The structure according to claim 1 , wherein said refractory metal contains tungsten.
3. The structure according to claim 1 , further comprising a foundation layer which adheres to said lower interconnection and to which said refractory metal film adheres at least between said lower interconnection and said plug.
4. The structure according to claim 3 , wherein said foundation layer is a member of the group consisting of a multilayered film of a tantalum compound layer and titanium compound layer, and a single-layered film selected from the group consisting of a tantalum compound layer and titanium compound layer.