Radiation source and method for producing a lens mould
View Patent ↗A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses ( 8 ) disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density.
1. A radiation source with many radiation-emitting semiconductor chips disposed side by side, wherein
a field of integrally formed lenses, forming a hexagonal lattice, is disposed upstream, in the projection direction, of the semiconductor chips, and
wherein color groups of the semiconductor chips are disposed in respective lines such that all the semiconductor chips in any given line are of an identical color group, with the color groups having their respective maximum emissions at different wavelengths.
2. The radiation source of claim 1 , wherein the lenses are formed by half spheres.
3. The radiation source of claim 1 , wherein the lenses are disposed in the hexagonally densest lattice.
4. The radiation source of claim 1 , wherein the outline of the lattice has a hexagonal shape.
5. The radiation source of claim 1 , wherein the semiconductor chips are bonded by line.
6. The radiation source of claim 1 , wherein the field of lenses is integrally formed with a casting resin for the semiconductor chips.
7. A radiation source with many radiation-emitting semiconductor chips disposed side by side, wherein
a field of integrally formed lenses, forming a hexagonal lattice, is disposed upstream, in the projection direction, of the semiconductor chips, and
wherein color groups of the semiconductor chips are disposed in respective lines, with the color groups having their respective maximum emissions at different wavelengths, and the semiconductor chips of the radiation source are mounted directly on a shared circuit board.
8. The radiation source of claim 7 , wherein the lenses are formed by half spheres.
9. The radiation source of claim 7 , wherein the lenses are disposed in the hexagonally densest lattice.
10. The radiation source of claim 7 , wherein the outline of the lattice has a hexagonal shape.
11. The radiation source of claim 7 , wherein the semiconductor chips are bonded by line.
12. The radiation source of claim 7 , wherein the field of lenses is integrally formed with a casting resin for the semiconductor chips.