High carrier concentration p-type transparent conducting oxide films
View Patent ↗A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.
1. A high hole concentration p-type transparent conducting oxide film characterized by improved carrier mobility and consisting essentially of: a transparent conducting oxide and a molecular doping source of a gas selected from the group consisting of NO and NO 2 , the oxide and doping source being grown under conditions sufficient to deliver the doping source intact onto the oxide.
2. The film of claim 1 wherein the transparent conducting oxide is selected from the group consisting of ZnO, CdO, In 2 O 3 , SnO 3 , Ga 2 O 3 , and the alloys thereof.
3. The film of claim 2 wherein said transparent conducting oxide is ZnO.
4. The film of claim 2 wherein said conditions sufficient to deliver said doping source include a temperature in the range of from about 200° to about 1000° C.
5. A method of producing high hole concentration p-type transparent conducting oxide films of improved carrier mobility comprising: growing a transparent conducting oxide and doping the oxide using a molecular doping source of a gas selected from the group consisting of NO and NO 2 under conditions sufficient to deliver the doping source intact on the oxide.
6. The method of claim 5 wherein the transparent conducting oxide is selected from the group consisting of ZnO, CdO, In 2 O 3 , SnO 2 , Ga 2 O 3 , and the alloys thereof.
7. The process of claim 6 wherein said transparent conducting oxide is ZnO.
8. The process of claim 6 wherein said conditions sufficient to deliver said doping source include a temperature in the range of from about 200° to about 1000° C.