IP Library Granted Patent US 7,012,794
Granted Patent B2
US 7,012,794 · App. 10/346,964 · Granted Mar 14, 2006

CMOS analog switch with auto over-voltage turn-off

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Quick Facts
Patent No.
US 7,012,794
App. No.
10/346,964
Granted
Mar 14, 2006
Kind
B2
Abstract

An analog transfer gate that can be connected to an external line of a chip that is also connected to a digital circuit. The transfer gate includes both NMOS and PMOS transistors for passing the analog signals in both directions. A voltage sensing circuit is connected to the external line and is configured to sense a voltage that is higher than the supply voltage of the analog circuit. When this occurs, it produces a sense output signal. The sense output signal activates a protection enabling circuit that turns off the PMOS and NMOS transistors. In addition, at least one additional protection transistor is activated to avoid too high of a voltage being applied across any of the transistor junctions.

Claims (38)

1. An analog transfer gate connected to an external line also connected to a digital circuit, comprising:

a NMOS transfer transistor connected between said external line and an analog circuit;

a PMOS transfer transistor connected between said external line and said analog circuit;

at least one protection transistor connected to one of said NMOS and PMOS transfer transistors;

a voltage sensing circuit connected to said external line and configured to sense a voltage higher than a supply voltage of said analog circuit and produce a sense output signal; and

a protection enabling circuit, having an input coupled to said voltage sensing circuit and outputs connected to said PMOS and NMOS transfer transistors and said protection transistor, said protection enabling circuit being responsive to said sense output signal to turn off said PMOS and NMOS transfer transistors and activate said protection transistor, wherein said voltage sensing circuit comprises:

first and second interconnected PMOS sensing transistors coupled to said external line and said supply voltage, respectively, said first transistor turning on when a voltage on said external line exceeds said supply voltage by more than a predetermined amount;

a transistor circuit connected between said first PMOS sensing transistor and ground; and

a feedback circuit connected between said transistor circuit and said first and second PMOS sensing transistors for accelerating the turn-on time of said first transistor.

2. The analog transfer gate of claim 1 further comprising:

a protection transistor connected between said first PMOS transistor and said transistor circuit;

wherein a connection between said protection circuit and said transistor circuit is an output of said voltage sensing circuit.

3. The analog transfer gate of claim 2 wherein said transistor circuit comprises:

a diode connected transistor connected to ground; and

a small transistor connected between said diode connected transistor and said protection transistor, said small transistor being at least 10,000 times smaller than said NMOS and PMOS transfer transistors.

4. The analog transfer gate of claim 1 wherein said protection enabling circuit comprises:

a digital inverter having an input connected to an output of said voltage sensing circuit and an output connected to a gate of said NMOS transfer transistor; and

an analog inverter connected between said output of said digital inverter and a gate of said PMOS transfer transistor.

5. The analog transfer gate of claim 4 wherein said analog inverter comprises:

a first PMOS transistor having a source connected to said external line

and a gate connected to a PMOS sensing transistor in said voltage sensing circuit;

a first NMOS transistor having a drain connected to a drain of said first PMOS transistor and a gate connected to said supply voltage, said drains of said first NMOS and PMOS transistors being connected to said gate of said PMOS transfer transistor; and

a second NMOS transistor connected between said first NMOS transistor and ground, and having a gate connected to said output of said digital inverter.

6. The analog transfer gate of claim 1 further comprising a substrate biasing circuit coupled to said external line and to said supply voltage to bias a substrate of said PMOS transfer transistor.

7. The analog transfer gate of claim 1 wherein said protection transistor comprises a PMOS protection transistor having a drain connected to a drain of said PMOS transfer transistor and a source connected to said supply voltage.

8. An analog transfer gate connected to an external line also connected to a digital circuit, comprising:

a NMOS transfer transistor connected between said external line and an analog circuit;

a PMOS transfer transistor connected between said external line and said analog circuit;

at least one protection transistor connected to one of said NMOS and PMOS transfer transistors;

a voltage sensing circuit connected to said external line and configured to sense a voltage higher than a supply voltage of said analog circuit and produce a sense output signal; and

a protection enabling circuit, having an input coupled to said voltage sensing circuit and outputs connected to said PMOS and NMOS transfer transistors and said protection transistor, said protection enabling circuit being responsive to said sense output signal to turn off said PMOS and NMOS transfer transistors and activate said protection transistor,

wherein said voltage sensing circuit comprises:

first and second interconnected PMOS sensing transistors coupled to said external line and said supply voltage, respectively, said first transistor turning on when a voltage on said external line exceeds said supply voltage by more than a predetermined amount;

a transistor circuit connected between said first PMOS sensing transistor and ground; and

a feedback circuit connected between said transistor circuit and said first and second PMOS sensing transistors for accelerating the turn-on time of said first transistor and

wherein said protection enabling circuit comprises:

a digital inverter having an input connected to an output of said voltage sensing circuit and an output connected to a gate of said NMOS transfer transistor; and

an analog inverter connected between said output of said digital inverter and a gate of said PMOS transfer transistor.

Assignments (7)
SECURITY AGREEMENT Recorded Jul 9, 2021
From: MAXLINEAR, INC.; MAXLINEAR COMMUNICATIONS, LLC; EXAR CORPORATION
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 056816/0089 →
RELEASE OF SECURITY INTEREST Recorded Jun 23, 2021
From: MUFG UNION BANK, N.A.
To: MAXLINEAR, INC.; EXAR CORPORATION; MAXLINEAR COMMUNICATIONS LLC
Reel/Frame 056656/0204 →
SUCCESSION OF AGENCY (REEL 042453 / FRAME 0001) Recorded Jul 1, 2020
From: JPMORGAN CHASE BANK, N.A.
To: MUFG UNION BANK, N.A.
Reel/Frame 053115/0842 →
MERGER AND CHANGE OF NAME Recorded Oct 4, 2017
From: EAGLE ACQUISITION CORPORATION; EXAR CORPORATION; EXAR CORPORATION
To: EXAR CORPORATION
Reel/Frame 044126/0634 →
SECURITY AGREEMENT Recorded May 12, 2017
From: MAXLINEAR, INC.; ENTROPIC COMMUNICATIONS, LLC (F/K/A ENTROPIC COMMUNICATIONS, INC.); EXAR CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 042453/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2015
From: STIFEL FINANCIAL CORP.
To: EXAR CORPORATION; CADEKA MICROCIRCUITS, LLC
Reel/Frame 035168/0384 →
SECURITY INTEREST Recorded May 29, 2014
From: EXAR CORPORATION; CADEKA MICROCIRCUITS, LLC
To: STIFEL FINANCIAL CORP.
Reel/Frame 033062/0123 →