Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same

1. A polishing pad for use in chemical mechanical polishing of substrates, said polishing pad having a polishing surface, comprising:

a porous fibrous matrix consisting of paper-making fibers, latex, nanometer-sized conditioning-reinforcing filler particles, and a thermoset resin binder for binding said fibrous matrix and filler particles;

said fibrous matrix and said binder forming a porous structure which enhances flow distribution of the polishing slurry and where polishing debris during chemical mechanical polishing of substrates is temporarily stored for subsequent rinsing away.

2. The polishing pad for use in chemical mechanical polishing of substrates according to claim 1 , wherein said porous matrix of fiber, filler and thermoset resin is a wet-laid papermaking-process structure.

3. The polishing pad for use in chemical mechanical polishing of substrates according to claim 1 , wherein said fibrous matrix consists of, by weight, approximately 40% to 95% said paper-making fibers, approximately 1–20% latex, approximately 1–30% conditioning-reinforcing filler particles in the approximate range of between 2–130 nanometers in size, and a thermoset resin content between approximately 20% to 60%.

4. The polishing pad for use in chemical mechanical polishing of substrates according to claim 1 , wherein said polishing surface is ground with a grit size of between approximately 36 and 320; said polishing surface comprising asperities in the approximate range of between 2 and 35 micrometers in height, width and length.

5. The polishing pads according to claim 1 , wherein said resin binder contains said nanometer-sized filler particles, said filler particles comprising at least one of spherical-shaped and platelet-shaped particles.

6. The polishing pads according to claim 5 , wherein said filler particles comprise at least one of the following: colloidal silica, silicon dioxide, alumina, ceria, diamond, diamond dust, silicon carbide, zirconia, boron nitride, boron carbide, iron oxide, celite, ceramic, garnet, ruby, emery, pumice, feldspar, and quartz.

7. The polishing pads according to claim 1 , wherein said polishing surface comprises asperities in the approximate range of between 2–35 micrometers in each of height, width and length formed by grinding with a grit size of approximately between 320 and 36 grit; and further comprising a series of arc-radial grooves with each said groove having a depth to within 0.010 in. of the overall thickness of the pad, each said groove having a width of between approximately 1/16 inch to ½ inch.

8. The polishing pads according to claim 1 , wherein said fibrous matrix consists of at least one chosen from the following group: papermaking cellulose fibers and papermaking non-cellulose fibers.

9. The polishing pads according to claim 1 , wherein said fibers are selected from at least one of the group consisting of: cotton linters, cellulose fibers, glass, lyocell, linen, aramid, polyester, polymer carbon, polyamide, rayon, polyurethane, phenolic, acrylic, and wool; said fibers having a length thereof in the range of between approximately 2–15 millimeters and a cross section of between 10–50 microns.

10. In a polishing pad for use in chemical mechanical polishing of substrates, the improvement comprising:

Polishing-pad base material consisting of, by weight: paper-making fibers in the range of approximately 40–95%, 1–20% latex, and 1–30% polishing-reinforcing filler particles of round or platelet shape having a size in the approximate range of between 2–130 nanometers.

11. The polishing pad for use chemical mechanical polishing of substrates according to claim 10 , wherein said fibers consist of, by weight, cotton linters in the range of approximately 40–95% and lyocell fiber in the range of approximately 8–12%, said filler particles consisting of collodial silica in the range of 3–10%, and said latex being in the approximate range of between 8–12%.

12. The polishing pad for use chemical mechanical polishing of substrates according to claim 10 , wherein said polishing pad base material has a thickness of between approximately 0.050–0.100 in., with a nominal density of approximately 0.400 g/cc.

13. A wet-laid base material for making polishing pads for use in the chemical mechanical polishing of substrates, comprising, by weight:

Paper-making fibers in the range of approximately 40–95%, 1–15% latex, thermoset resin binder, and nanometer-sized conditioning-reinforcing filler-particles in the range of 2–130 nanometers.

14. The wet-laid base material for making polishing pads for use in the chemical mechanical polishing of substrates according to claim 13 , wherein said fibers consist of cotton linters in the range of approximately 40–95% and lyocell fiber in the range of approximately 1–12%, said filler-particles consisting of colloidal silica in the range of approximately 3–15%, and said latex being in the approximate range of between 1–20%.

15. The wet-laid base material for making polishing pads for use in the chemical mechanical polishing of substrates according to claim 13 , wherein said fibers consist of cotton linters in the amount of 71–81%, and lyocell fiber in the amount of 8–10%, said filler particles consisting of collodial silica in the amount of 3–5% and said latex being in the approximate range of between 8–10%.