Method of fabricating a semiconductor device with a gold conductive layer and organic insulating layer

1. A method for fabricating a semiconductor device, comprising:

removing particles from a surface of a conductive layer which is comprised of gold;

forming an intermediate insulating layer on the conductive layer, wherein the intermediate insulating layer is composed of an amino silane compound; and

forming an organic insulating layer on the intermediate insulating layer.

2. The method according to claim 1 , wherein the organic insulating layer and the conductive layer are joined with the intermediate insulating layer.

3. The method according to claim 1 , wherein a concave portion is formed in the surface of the conductive layer.

4. The method according to claim 1 , wherein the amino silane compound is N-aminoalkyl-aminoalkyl (dimethoxyl)-methylsilane.

5. The method according to claim 1 , wherein the particles are comprised of metallic oxide.

6. The method according to claim 1 , the step of removing including

exposing the surface of the conductive layer to hydrochloric acid solution.

7. The method according to claim 6 , wherein the hydrochloric acid solution is diluted with water so as to cause a concentration of the hydrochloric acid solution to be equal to or more than one three hundredth.

8. The method according to claim 1 , the step of removing including

exposing the surface of the conductive layer to an aqua regia solution.

9. The method according to claim 8 , wherein the aqua regia solution is diluted with water so as to cause a concentration of the aqua regia solution to be equal to or more than one tenth.

10. A method for fabricating a semiconductor device, comprising:

forming a first conductive layer on a semiconductor substrate;

forming an insulating layer on the first conductive layer and the semiconductor substrate;

forming a contact hole in the insulating layer so as to expose either a portion of the first conductive layer or a portion of the semiconductor substrate;

forming a metallic layer on an upper surface of the insulating layer and an interior surface of the contact hole;

forming a second conductive layer on the metallic layer, wherein the second conductive layer is comprised of gold;

etching the metallic layer using the second conductive layer as a mask;

removing particles from a surface of the second conductive layer;

forming an intermediate insulating layer on the second conductive layer, wherein the intermediate insulating layer is composed of an amino silane compound; and

forming an organic insulating layer on the intermediate insulating layer;

wherein the organic insulating layer and the second conductive layer are joined with the intermediate insulating layer.

11. The method according to claim 10 , the step of etching including

obliquely implanting ions to the semiconductor substrate.

12. The method according to claim 10 , wherein the particles include iron oxide.

13. The method according to claim 10 , the step of removing including

exposing the second conductive layer to hydrochloric acid solution.

14. The method according to claim 13 , wherein the hydrochloric acid solution is diluted with water so as to cause a concentration of the hydrochloric acid solution to be equal to or more than one three hundredth.

15. The method according to claim 10 , wherein the amino silane compound is N-aminoalkyl-aminoalkyl (dimethoxyl)-methylsilane.