IP Library Granted Patent US 6,891,393
Granted Patent B2
US 6,891,393 · App. 10/373,869 · Granted May 10, 2005

Synchronous semiconductor device, and inspection system and method for the same

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Quick Facts
Patent No.
US 6,891,393
App. No.
10/373,869
Granted
May 10, 2005
Kind
B2
Abstract

The present invention provides a synchronous semiconductor device suitable for improving the efficiency of application of electrical stresses to the device, an inspection system and an inspection method thereof in order to efficiently carrying out a burn-in stress test. A command latch circuit having an access command input will output a low-level pulse in synchronism with an external clock. The pulse will pass through a NAND gate of test mode sequence circuit and a common NAND gate to output a low-level internal precharge signal, which will reset a word line activating signal from the control circuit. Simultaneously, an internal precharge signal passing through the NAND gate will be delayed by an internal timer a predetermined period of time to output through the NAND gate a low-level internal active signal, which will set a word line activating signal from the control circuit.

Claims (13)

1. A synchronous semiconductor device having an inspection mode for alternately transiting between an activated state and an inactivated state in order to carry out a test in the activated state, comprising:

a latch unit for latching a synchronization inactivating signal in synchronism with first synchronization timing in a synchronization signal;

an activating detector unit for detecting an activating signal a predetermined period of time after the inactivated state; and

an activating unit for commanding the activated state based on the activating signal detected by the activating detector unit.

2. A synchronous semiconductor device set forth in claim 1 , wherein:

the activating detector unit is a delay unit for measuring a predetermined delay time based on the signal generated from the synchronization inactivating signal or based on the synchronization inactivating signal itself; and

the activating signal is an input signal to the delay unit.

3. A synchronous semiconductor device set forth in claim 2 , wherein:

the synchronization inactivating signal is a synchronization activating signal in normal operation.

4. A synchronous semiconductor device set forth in claim 1 , wherein:

the activating signal is a signal generated based on one or more second asynchronous control signals input from an external source.

5. A synchronous semiconductor device set forth in claim 1 , wherein:

the inactivating signal is generated based on one or more second synchronous control signals input from an external source and in synchronism with second synchronization timing of the synchronization signal.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035507/0706 →
CHANGE OF NAME Recorded Jul 22, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024982/0245 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2008
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 021998/0645 →