IP Library › Granted Patent US 6,980,579
Granted Patent B2
US 6,980,579 · App. 10/376,480 · Granted Dec 27, 2005

Temperature compensated lasers

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Quick Facts
Patent No.
US 6,980,579
App. No.
10/376,480
Granted
Dec 27, 2005
Kind
B2
Abstract

A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.

Claims (22)

1. A semiconductor laser, said semiconductor laser having an emission wavelength and comprising:

a light emitting material;

means for causing said light emitting material to emit light;

at least first and second mirrors disposed on opposite sides of said light emitting material thereby forming an optical cavity inside which lasing occurs and from which output power is emitted through said second mirror; and

means for optically compensating said semiconductor laser for temperature variations in the slope of output power vs. input current of said semiconductor laser, wherein said second mirror has a first reflectivity at a first emission wavelength at a first temperature, and a second reflectivity lower than said first reflectivity at a second emission wavelength at a second temperature higher than said first temperature, wherein a maximum of a first order derivative of said second mirror (Δ reflectivity vs. emission wavelength) is disposed near said emission wavelength, and wherein said semiconductor laser comprises a VCSEL.

2. The semiconductor laser recited in claim 1 , wherein said first mirror has a minimum of a first order derivative (Δ reflectivity vs. emission wavelength) disposed near said emission wavelength.

3. The semiconductor laser recited in claim 1 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for slope efficiency changes with respect to temperature (dn/dT).

4. The semiconductor laser recited in claim 1 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for current threshold changes with respect to temperature (dIth/dT) and for slope efficiency changes with respect to temperature (dn/dT).

5. A semiconductor laser, said semiconductor laser having an emission wavelength and comprising:

a light emitting material;

means for causing said light emitting material to emit light;

at least first and second mirrors disposed on opposite sides of said light emitting material thereby forming an optical cavity inside which lasing occurs and from which output power is emitted through said second mirror;

means for optically compensating said semiconductor laser for temperature variations in the slope of output power vs. input current of said semiconductor laser, wherein a minimum of a first order derivative of said first mirror (Δ reflectivity vs. emission wavelength) is disposed near said emission wavelength, and wherein said semiconductor laser comprises a VCSEL.

6. The semiconductor laser recited in claim 5 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for slope efficiency changes with respect to temperature (dn/dT).

7. The semiconductor laser recited in claim 5 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for current threshold changes with respect to temperature (dIth/dT) and for slope efficiency changes with respect to temperature (dn/dT).

8. A semiconductor laser, said semiconductor laser having an emission wavelength and comprising:

a light emitting material;

means for causing said light emitting material to emit light;

at least first and second mirrors disposed on opposite sides of said light emitting material thereby forming an optical cavity inside which lasing occurs and from which output power is emitted through said second mirror; and

means for optically compensating said semiconductor laser for temperature variations in the slope of output power vs. input current of said semiconductor laser, wherein said second mirror has a first reflectivity at a first emission wavelength at a first temperature, and a second reflectivity lower than said first reflectivity at a second emission wavelength at a second temperature higher than said first temperature, wherein a maximum of a first order derivative of said second mirror (Δ reflectivity vs. emission wavelength) is disposed near said emission wavelength, and wherein said semiconductor laser comprises a VCSEL.

9. The semiconductor laser recited in claim 8 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for slope efficiency changes with respect to temperature (dn/dT).

10. The semiconductor laser recited in claim 8 , wherein said means for optically compensating said semiconductor laser for temperature variations in said semiconductor laser compensates for current threshold changes with respect to temperature (dIth/dT) and for slope efficiency changes with respect to temperature (dn/dT).