Induction heating of thin films
View Patent ↗A method of performing regional heating of a system having a substrate. The method may include applying a thin film to the system, and controllably energizing a coil positioned near the thin film. The energized coils thereby generate a magnetic flux. The method further includes inducing a current in the thin film with the magnetic flux thereby heating the system.
1. A method of forming a system having a plurality of micro-devices or micro-structures on a substrate, the method comprising:
applying a first thin film to the system, the applying act including applying the first thin film to a first microsystem;
locally applying a thin ferromagnetic film to the first microsystem;
controllably energizing a coil positioned near the thin ferromagnetic film, the energizing act resulting in a magnetic flux; and
inducing a current in the thin ferromagnetic film with the magnetic flux to cause the thin ferromagnetic film to radiate heat, thereby locally heating the first thin film of the microsystem to change a property of the first thin film.
2. The method of claim 1 , further comprising positioning the substrate in a vacuum chamber.
3. The method of claim 1 , wherein locally applying the thin ferromagnetic film to the first microsystem further comprises depositing the thin ferromagnetic film on the first microsystem.
4. The method of claim 1 , wherein locally applying the thin ferromagnetic film to the first microsystem further comprises depositing the thin ferromagnetic film in the first microsystem.
5. The method of claim 1 , further comprising positioning a heat reducer on the system near the thin ferromagnetic film.
6. The method of claim 1 , further comprising applying a diffusion barrier between the first thin film and the thin ferromagnetic film.
7. The method of claim 6 , wherein the thin ferromagnetic film is locally applied to the diffusion barrier.
8. The method of claim 1 , further comprising positioning the system near the coils.
9. The method of claim 1 , wherein energizing the coil further comprises pulsing a current through the coil.
10. The method of claim 9 , wherein the pulsed current is applied for a predetermined duration.
11. The method of claim 10 , wherein the predetermined duration is approximately one second.
12. The method of claim 1 , further comprising removing the thin ferromagnetic film in a liquid chemical after inducing the current.
13. The method of claim 12 , wherein the liquid chemical comprises an acidic solution.
14. The method of claim 1 , further comprising removing the thin ferromagnetic film in a gaseous process after inducing the current.
15. The method of claim 14 , wherein the gaseous process comprises a plasma process.
16. The method of claim 1 , further comprising removing the thin ferromagnetic film in a dry process after inducing the current.
17. The method of claim 1 , wherein energizing the coil comprises controlling the frequency of a current provided to the coil.
18. The method of claim 1 , further comprising patterning the thin ferromagnetic film corresponding to a region of the system.
19. The method of claim 1 , further comprising removing the thin ferromagnetic film after inducing the current.
20. The method of claim 1 , wherein the thin ferromagnetic film has a thickness less than 100 microns.
21. The method of claim 1 , wherein the ferromagnetic thin film has a thickness less than 50 microns.
22. The method of claim 1 , wherein the thin ferromagnetic film has a thickness less than 10 microns.
23. The method of claim 1 , wherein the thin ferromagnetic film has a thickness between 0.5 and 10 microns.
24. The method of claim 1 , wherein the microsystem is selected from the group consisting of a micro-device and micro-structure.
25. The method of claim 1 , wherein the heating of the thin ferromagnetic film is further supported by magnetic hysteresis heating.
26. A method of forming a system having a plurality of micro-devices or micro-structures on a substrate, the method comprising:
applying a first thin film to the system, the applying act including applying the first thin film to a first microsystem;
locally applying a thin ferromagnetic film to the first microsystem; and
generating heat in the thin ferromagnetic film thereby locally heating the first thin film to change a property of the first thin film but not have the first thin film combine with the thin ferromagnetic film, wherein generating the heat includes controllably energizing a coil positioned near the thin ferromagnetic film thereby inducing a current in the thin ferromagnetic film.
27. The method of claim 26 , further comprising positioning the system in a vacuum chamber.
28. The method of claim 27 , wherein locally applying the thin ferromagnetic film to the first microsystem further comprises depositing the thin ferromagnetic film on the first microsystem.
29. The method of claim 27 , wherein locally applying the thin ferromagnetic film to the first microsystem further comprises depositing the thin ferromagnetic film in the first microsystem.
30. The method of claim 26 , wherein locally applying the thin ferromagnetic film comprises patterning the thin ferromagnetic film.
31. The method of claim 30 , wherein the thin ferromagnetic film is locally applied to the diffusion barrier.
32. The method of claim 26 , further comprising positioning a heat reducer on the system near the thin ferromagnetic film.
33. The method of claim 26 , further comprising applying a diffusion barrier between the first thin film and the thin ferromagnetic film.
34. The method of claim 26 , further comprising positioning the system near the coils.
35. The method of claim 26 , wherein energizing the coil further comprises pulsing a current through the coil.
36. The method of claim 35 , wherein the pulsed current is applied for a predetermined duration.
37. The method of claim 36 , wherein the predetermined duration is approximately one second.
38. The method of claim 26 , further comprising removing the thin ferromagnetic film in a liquid chemical after generating heat in the thin ferromagnetic film.
39. The method of claim 38 , wherein the liquid chemical comprises an acidic solution.
40. The method of claim 26 , further comprising removing the thin ferromagnetic film in a gaseous process after generating heat in the thin ferromagnetic film.
41. The method of claim 40 , wherein the gaseous process comprises a plasma process.
42. The method of claim 26 , further comprising removing the thin ferromagnetic film in a dry process after generating heat in the thin ferromagnetic film.
43. The method of claim 26 , wherein energizing the coil comprises controlling the frequency of a current provided to the coil.
44. The method of claim 26 , further comprising removing the thin ferromagnetic film after generating heat in this ferromagnetic film.
45. The method of claim 26 , wherein the thin ferromagnetic film has a thickness between 0.5 and 10 microns.
46. The method of claim 26 , wherein the heating of the thin ferromagnetic film is further supported by magnetic hysteresis heating.
47. A method of performing regional heating of a micro-device or micro-structure of a system having a substrate, the method comprising:
patterning a selected region of the system, the selected region comprising a microsystem having a first thin film;
applying a thin ferromagnetic film to the selected region;
passing a current through an inductive coil, thereby producing a flux near the inductive coil; and
controllably inducing a current in the thin ferromagnetic film with the flux to cause the thin ferromagnetic film to radiate heat, thereby heating the selected region of the system including heating the first thin film to change a property of the first thin film.
48. The method of claim 47 , further comprising positioning the system in a vacuum chamber.
49. The method of claim 47 , further comprising positioning a heat reducer on the substrate near the thin ferromagnetic film.
50. The method of claim 47 , wherein applying the thin ferromagnetic film to the selected region further comprises depositing the thin ferromagnetic film on the selected region.
51. The method of claim 47 , wherein applying the thin ferromagnetic film to the selected region further comprises depositing the thin ferromagnetic film in the selected region.
52. The method of claim 47 , further comprising depositing a diffusion barrier to the selected region prior to applying the thin ferromagnetic film.
53. The method of claim 47 , further comprising positioning the system near the coils.
54. The method of claim 47 , wherein passing the current further comprises pulsing the current through the coil.
55. The method of claim 54 , wherein the pulse current is applied for a predetermined duration.
56. The method of claim 55 , wherein the predetermined duration is approximately one second.
57. The method of claim 47 , further comprising removing the thin ferromagnetic film in a liquid chemical after inducing the current.
58. The method of claim 57 , wherein the liquid chemical comprises an acidic solution.
59. The method of claim 47 , further comprising removing the thin ferromagnetic film in a gaseous process after inducing the current.
60. The method of claim 59 , wherein the gaseous process comprises a plasma process.
61. The method of claim 47 , further comprising removing the thin ferromagnetic film in a dry process after inducing the current.
62. The method of claim 47 , further comprising removing the thin ferromagnetic film after inducing the current.
63. The method of claim 47 , wherein the thin ferromagnetic film has a thickness between 0.5 and 10 microns.
64. The method of claim 47 , wherein the heating of the thin ferromagnetic film is further supported by magnetic hysteresis heating.
65. A method of performing regional heating of a micro-device or micro-structure of a system having a substrate, the method comprising:
applying a thin ferromagnetic film to the system, the system comprising a microsystem having a first thin film;
removing a region of the thin ferromagnetic film from the system;
passing a current through an inductive coil thereby producing a flux at the inductive coil; and
controllably inducing a current in the thin ferromagnetic film with the flux to cause the thin ferromagnetic film to radiate heat, thereby heating the microsystem including heating the first thin film to change a property of the first thin film.
66. The method of claim 65 , further comprising positioning the system in a vacuum chamber.
67. The method of claim 65 , wherein applying the thin ferromagnetic film to the system further comprises depositing the thin ferromagnetic film on the system.
68. The method of claim 65 , wherein applying the thin ferromagnetic film to the system further comprises depositing the thin ferromagnetic film in the system.
69. The method of claim 65 , further comprising positioning a heat reducer on the system near the thin ferromagnetic film.
70. The method of claim 65 , further comprising applying a diffusion barrier to the system prior to applying the thin ferromagnetic film.
71. The method of claim 65 , further comprising positioning the system near the coils.
72. The method of claim 65 , wherein passing the current further comprises pulsing a current through the coil.
73. The method of claim 71 , wherein the current is applied for a predetermined duration.
74. The method of claim 73 , wherein the predetermined duration is approximately one second.
75. The method of claim 65 , further comprising removing the thin ferromagnetic film in a liquid chemical after inducing the current.
76. The method of claim 75 , wherein the liquid chemical comprises an acidic solution.
77. The method of claim 65 further comprising removing the thin ferromagnetic film in a gaseous process after inducing the current.
78. The method of claim 77 , wherein the gaseous process comprises a plasma process.
79. The method of claim 65 , further comprising removing the thin ferromagnetic film in a dry process after inducing the current.
80. The method of claim 65 , wherein energizing the coil comprises controlling the frequency of a current provided to the coil.
81. The method of claim 65 , further comprising removing the thin ferromagnetic film after inducing the current.
82. The method of claim 65 , wherein the thin ferromagnetic film has a thickness between 0.5 and 10 microns.
83. The method of claim 65 , wherein the heating of the thin ferromagnetic film is further supported by magnetic hysteresis heating.