Thin-film electronic device module

1. An encapsulated electronic thin-film device, comprising:

a substrate;

an active area on said substrate, said active area includes at least one electronic thin-film elements;

a thin-film encapsulation layer that covers at least said active area, said thin-film encapsulation layer is selectively deposited; and

a plurality of conducting traces coupled to said active area, said plurality of conducting traces protrude slightly past a perimeter of said thin-film encapsulation layer,

wherein said thin-film encapsulation layer protrudes past a perimeter of said active area by a range of about 0.5 mm to about 3.0 mm and

wherein said plurality of conducting traces protrudes past said perimeter of said thin-film encapsulation layer by a range of about 0.5 mm to about 3.0 mm.

2. The encapsulated electronic thin-film device of claim 1 further comprising one or more connectors, said one or more connectors couple to said plurality of conducting traces on two or more different sides of said active area.

3. The encapsulated electronic thin-film device of claim 1 further comprising a connector that covers at least a portion of said active area.

4. The encapsulated electronic thin-film device of claim wherein the slight protrusion of said plurality of conducting traces is from two or more different sides of said active area.

5. The encapsulated electronic thin-film device of claim 4 wherein a portion of said plurality of conducting traces protruding from each of said two or more different sides of said active area is coupled to a corresponding one of two or more contact pads.

6. The encapsulated electronic thin-film device of claim 5 wherein each of said two or more contact pads is placed about 10 um to about 10 mm from said thin-film encapsulation layer.

7. The encapsulated electronic thin-film device of claim 1 wherein said plurality of conducting traces fan outward from said active area.

8. The encapsulated electronic thin-film device of claim 1 wherein said electronic thin-film device is any one of: an active matrix OLED display, a passive matrix OLED display, an OLED light source, an active matrix inorganic electroluminescent display, a passive matrix inorganic electroluminescent display, an organic light detector array, an inorganic light detector array, an organic solar cell array, an inorganic solar cell array, an organic thin-film transistor array, or an inorganic thin-film transistor array.

9. The encapsulated electronic thin-film device of claim 1 wherein said at least one electronic thin-film element is any one of: at least one OLED, at least one inorganic pixel element, at least one light detector element, at least one solar cell element, or at least one thin-film transistor element.

10. The encapsulated electronic thin-film device of claim 1 wherein said thin-film encapsulation layer has a thickness less than about 100 micrometers.

11. The encapsulated electronic thin-film device of claim 10 wherein said thin-film encapsulation layer has a thickness less than about 50 micrometers.

12. A method to encapsulate an electronic thin-film device, comprising:

fabricating an active area on a substrate, said active area includes at least one electronic thin-film element, wherein fabricating said active area includes patterning a plurality of conductive traces that are coupled to said at least one electronic thin-film element; and

selectively depositing a thin-film encapsulation layer on at least said active area to cover at least said active area,

wherein said plurality of conductive traces are patterned such that they protrude slightly past a perimeter of said thin-film encapsulation layer,

wherein said thin-film encapsulation layer protrudes past said perimeter of said active area by a range of about 0.5 mm to about 3.0 mm, and

wherein said plurality of conducting traces protrudes pass said perimeter of said thin-film encapsulation layer by a range of about 0.5 mm to about 3.0 mm.

13. The method of claim 16 wherein fabricating said active area includes

selectively depositing at least one first electrode on said substrate;

wherein patterning said plurality of conductive traces includes selectively depositing a metallic layer on said substrate to form said plurality of conductive traces;

selectively depositing at least one semiconductive layer on said at least one first electrode; and

selectively depositing at least one second electrode on said at least one semiconductive layer,

wherein coupling said plurality of conductive traces to said at least one electronic thin-film element includes coupling said plurality of conductive traces to said at least one first electrode and said at least one second electrode.

14. The method of claim further comprising

coupling said plurality of conductive traces to a plurality of contact pads.

15. The method of claim 14 comprising

coupling at least one connector to said plurality of contact pads.

16. The method of claim 15 further comprising

singulating said substrate,

wherein said at least one connector is coupled to said plurality of contact pads prior to singulating said substrate.

17. The method of claim 12 further comprising

placing a connector on at least a portion of said active area to cover at least said portion of said active area.

18. The method of claim 12 wherein said plurality of conducting traces protrude from two or more different sides of said active area.

19. The method of claim 12 wherein said thin-film encapsulation layer extends to a perimeter of said active area or protrudes slightly past said perimeter of said active area.

20. The method of claim 12 wherein said electronic thin-film device is any one of: an active matrix OLED display, a passive matrix OLED display, an OLED light source, an active matrix inorganic electroluminescent display, a passive matrix inorganic electroluminescent display, an organic light detector array, an inorganic light detector array, an organic solar cell array, an inorganic solar cell array, an organic thin-film transistor array, or an inorganic thin-film transistor array.

21. The method of claim 12 wherein said at least one electronic thin-film element is any one of: at least one OLED, at least one inorganic pixel element, at least one light detector element, at least one solar cell element, or at least one thin-film transistor element.

22. The method of claim 12 wherein said thin-film encapsulation layer has a thickness less than about 100 micrometers.

23. The method of claim 22 wherein said thin-film encapsulation layer has a thickness less than about 50 micrometers.