IP Library Granted Patent US 7,105,103
Granted Patent B2
US 7,105,103 · App. 10/383,573 · Granted Sep 12, 2006

System and method for the manufacture of surgical blades

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Quick Facts
Patent No.
US 7,105,103
App. No.
10/383,573
Granted
Sep 12, 2006
Kind
B2
Abstract

A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5–500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

Claims (112)

1. A method for manufacturing a cutting device from a crystalline material, the method comprising:

machining at least one blade profile in a wafer of crystalline material on a first side of the wafer of the crystalline material;

isotropically etching the wafer of crystalline material to form at least one surgical blade comprising the at least one blade profile; and

singulating the at least one surgical blades.

2. The method according to claim 1 , wherein the machining step comprises:

machining at least one blade profile in the wafer of crystalline material with a dicing saw blade.

3. The method according to claim 1 , wherein the machining step comprises:

machining at least one blade profile in the wafer of crystalline material with a laser beam.

4. The method according to claim 3 , wherein the laser beam is produced by an excimer laser or a laser waterjet.

5. The method according to claim 1 , wherein the machining step comprises:

machining at least one blade profile in the wafer of crystalline material with an ultrasonic machine.

6. The method according to claim 1 , wherein the machining step comprises:

machining at least one blade profile in the wafer of crystalline material with a hot forging process.

7. The method according to claim 1 , wherein the etching step comprises:

placing the wafer of crystalline material with at least one blade profile on a wafer boat;

immersing the wafer boat and wafer of crystalline material with at least one blade profile in an isotropic acid bath;

etching the crystalline material in a uniform manner such that the crystalline material is removed in a uniform manner on any exposed surface, whereby a sharp surgical blade edge is etched in the shape of the at least one blade profile.

8. The method according to claim 7 , wherein the isotropic acid bath comprises:

a mixture of hydrofluoric acid, nitric acid and acetic acid.

9. The method according to claim 7 , wherein the isotropic acid bath comprises:

a mixture of hydrofluoric acid, nitric acid and water.

10. The method according to claim 1 , wherein the etching step comprises:

placing the wafer of crystalline material with at least one blade profile in a wafer boat;

spraying a spray etchant at the wafer boat and wafer of crystalline material with at least one blade profile;

etching the crystalline material in a uniform manner with the spray etchant such that the crystalline material is removed in a uniform manner on any exposed surface, whereby a sharp surgical blade edge is etched in the shape of the at least one blade profile.

11. The method according to claim 1 , wherein the etching step comprises:

placing the wafer of crystalline material with at least one blade profile on a wafer boat;

immersing the wafer boat and wafer of crystalline material with at least one blade profile in an isotropic xenon difluoride, sulfur hexafluoride or similar fluorinated gas environment;

etching the crystalline material in a uniform manner with the isotropic xenon difluoride, sulfur hexafluoride or similar fluorinated gas such that the crystalline material is removed in a uniform manner on any exposed surface, whereby a sharp surgical blade edge is etched in the shape of the at least one blade profile.

12. The method according to claim 1 , wherein the etching step comprises:

placing the wafer of crystalline material with at least one blade profile in a wafer boat;

immersing the wafer boat and wafer of crystalline material with at least one blade profile in an electrolytic bath;

etching the crystalline material in a uniform manner with the electrolytic bath such that the crystalline material is removed in a uniform manner on any exposed surface, whereby a sharp surgical blade edge is etched in the shape of the at least one blade profile.

13. The method according to claim 1 , wherein the singulating step comprises:

dicing the machined wafer of crystalline material with a dicing blade.

14. The method according to claim 1 , wherein the singulating step comprises:

dicing the machined wafer of crystalline material with a laser beam.

15. The method according to claim 1 , wherein the laser beam is produced by an excimer laser or a laser waterjet.

16. The method according to claim 1 , further comprising:

dicing the machined wafer of crystalline material profiles after machining the at least one blade profile in the form of single bevel surgical blade and prior to the step of etching.

17. The method according to claim 16 , wherein the dicing step comprises:

dicing the machined wafer of crystalline material with a dicing blade.

18. The method according to claim 16 , wherein the dicing step comprises:

dicing the machined wafer of crystalline material with a laser beam.

19. The method according to claim 18 , wherein the laser beam is produced by an excimer laser or a laser waterjet.

20. The method for manufacturing a surgical blade from a crystalline material according to claim 1 , further comprising:

machining at least one second blade profile in the wafer of crystalline material on a second side of the wafer of crystalline material prior to the step of etching.

21. The method according to claim 20 , further comprising:

coating the first side of the machined wafer of crystalline material.

22. The method according to claim 21 , wherein the coating step comprises:

coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.

23. The method according to claim 20 , further comprising:

dicing the machined wafer of crystalline material into separated machined double beveled blade profiles after machining the at least one second blade profile in the second side and prior to the step of etching.

24. The method according to claim 23 , wherein the dicing step comprises:

dicing the machined wafer of crystalline material with a dicing blade.

25. The method according to claim 23 , wherein the dicing step comprises:

dicing the machined wafer of crystalline material with a laser beam.

26. The method according to claim 25 , wherein the laser beam is produced by an excimer laser or a laser waterjet.

27. The method according to claim 1 , further comprising:

coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and

mounting the wafer of crystalline material on its first side prior to the step of etching.

28. The method according to claim 27 , wherein the coating step comprises:

coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.

29. The method according to claim 1 , wherein the crystalline material comprises silicon.

30. A method for manufacturing a cutting device from a crystalline material, comprising:

mounting a wafer of crystalline material on a mounting assembly;

pre-cutting the mounted wafer of crystalline material, such that a plurality of through hole fiducials are cut to assist in the machining step;

machining at least one blade profile in the wafer of crystalline material on its first side;

etching the wafer of crystalline material to form at least one surgical blade;

singulating the etched crystalline material surgical blades; and

radiating the singulated etched crystalline material surgical blades with ultra-violet light, to separate them from the mounting assembly, in preparation for packaging for sale.

31. The method according to claim 30 wherein the pre-cutting step comprises:

pre-cutting through hole fiducials in the mounted wafer of crystalline material with a laser beam.

32. The method according to claim 31 wherein the laser beam is produced by an excimer laser or a laser waterjet.

33. The method according to claim 30 wherein the pre-cutting step comprises:

pre-cutting through hole fiducials in the mounted wafer of crystalline material using a mechanical machining device.

34. The method according to claim 33 wherein the mechanical machining device comprises a drilling tool, ultrasonic machining tool or a mechanical grinding device.

35. The method according to claim 30 wherein the crystalline material comprises silicon.

36. A method for manufacturing a cutting device from a crystalline material, comprising:

mounting a wafer of crystalline material on a mounting assembly;

pre-cutting the mounted wafer of crystalline material, such that a plurality slots are cut to assist in the machining step;

machining at least one blade profile in the wafer of crystalline material on its first side;

etching the wafer of crystalline material to form at least one surgical blade;

singulating the etched crystalline material surgical blades; and

radiating the singulated etched crystalline material surgical blades with ultra-violet light, to separate them from the mounting assembly, in preparation for packaging for sale.

37. The method according to claim 36 further comprising:

pre-cutting slots in the mounted wafer of crystalline material with a laser beam a distance away from the edge of the crystalline material; and

machining the at least one blade profile with a dicing saw blade that engages the crystalline wafer at the pre-cut slot.

38. The method according to claim 37 , wherein the laser beam is produced by an excimer laser or a laser waterjet.

39. The method according to claim 36 further comprising:

pre-cutting slots in the mounted wafer of crystalline material with a mechanical machining device a distance away from the edge of the crystalline material; and

machining the at least one blade profile with a dicing saw blade that engages crystalline wafer at the pre-cut slot.

40. The method according to claim 39 , wherein the mechanical machining device comprises a drilling tool, ultrasonic machining tool or a mechanical grinding device.

41. The method according to claim 36 wherein the crystalline material comprises silicon.

42. A method for manufacturing a cutting device, the method comprising:

pre-cutting a wafer of a crystalline material, such that a plurality of through hole fiducials are cut to assist in a machining step;

machining at least one blade profile in the wafer of the crystalline material; and

etching the wafer of crystalline material to form at least one surgical blade.

43. The method according to claim 42 , further comprising singulating the at least one surgical blade.

44. The method according to claim 42 , wherein the etching of the wafer comprises isotropically etching the wafer of the crystalline material to form the at least one surgical blade comprising the at least one blade profile.

45. The method according to claim 44 further comprising:

mounting the wafer of the crystalline material on a mounting assembly; and

radiating the singulated surgical blade with ultra-violet light, to separate the singulated surgical blade from the mounting assembly.

46. A method for manufacturing a cutting device, the method comprising:

pre-cutting a wafer of a crystalline material, such that a plurality of slots are cut to assist in a machining step;

machining at least one blade profile in the wafer of the crystalline material; and

etching the wafer of crystalline material to form at least one surgical blade.

47. The method according to claim 46 , further comprising singulating the at least one surgical blade.

48. The method according to claim 46 , wherein the etching of the wafer comprises isotropically etching the wafer of the crystalline material to form the at least one surgical blade comprising the at least one blade profile.

49. The method according to claim 48 further comprising:

mounting the wafer of the crystalline material on a mounting assembly; and

radiating the singulated surgical blade with ultra-violet light, to separate the singulated surgical blade from the mounting assembly.

Assignments (12)
RELEASE OF SECURITY INTEREST Recorded Mar 7, 2025
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: BEAVER-VISITEC INTERNATIONAL (US), INC.; BEAVER-VISITEC INTERNATIONAL, INC.
Reel/Frame 070442/0705 →
RELEASE OF SECURITY INTEREST Recorded Mar 7, 2025
From: APEX FINANCIAL SERVICES SPAIN, S.L.U. (FORMERLY SANNE AGENSYND, S.L.U.), AS COLLATERAL AGENT
To: BEAVER-VISITEC INTERNATIONAL (US), INC.; BEAVER-VISITEC INTERNATIONAL, INC.
Reel/Frame 070442/0729 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Jun 29, 2022
From: BEAVER-VISITEC INTERNATIONAL (US), INC.; BEAVER-VISITEC INTERNATIONAL, INC.
To: SANNE AGENSYND, S.L.U.
Reel/Frame 060541/0858 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Feb 28, 2019
From: BEAVER-VISITEC INTERNATIONAL (US), INC.; BEAVER-VISITEC INTERNATIONAL, INC.
To: GOLDMAN SACHS BANK USA, AS FIRST LIEN COLLATERAL AGENT
Reel/Frame 048473/0367 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Feb 28, 2019
From: BEAVER-VISITEC INTERNATIONAL (US), INC.; BEAVER-VISITEC INTERNATIONAL, INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION, AS SECOND LIEN COLLATERAL AGENT
Reel/Frame 048478/0301 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2019
From: UBS AG, STAMFORD BRANCH
To: BEAVER-VISITEC INTERNATIONAL (US), INC.
Reel/Frame 048490/0020 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2017
From: CORTLAND CAPITAL MARKET SERVICES LLC, AS COLLATERAL AGENT
To: BEAVER-VISITEC INTERNATIONAL (US), INC.
Reel/Frame 043648/0696 →
SECURITY INTEREST Recorded Aug 24, 2016
From: BEAVER-VISITEC INTERNATIONAL (US), INC.
To: CORTLAND CAPITAL MARKET SERVICES, LLC
Reel/Frame 039808/0810 →
FIRST LIEN SECURITY AGREEMENT Recorded Aug 23, 2016
From: BEAVER-VISITEC INTERNATIONAL (US), INC.
To: UBS AG, STAMFORD BRANCH, AS COLLATERAL AGENT
Reel/Frame 039781/0437 →
RELEASE OF SECURITY INTEREST Recorded Aug 22, 2016
From: HEALTHCARE FINANCIAL SOLUTIONS, LLC
To: ULTRACELL MEDICAL TECHNOLOGIES, INC.; BECTON DICKINSON ACUTECARE, INC.; TURNER ACQUISITION, LLC; BEAVER-VISTEC INTERNATIONAL (US), INC.
Reel/Frame 039771/0931 →
ASSIGNMENT OF INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Nov 18, 2015
From: GENERAL ELECTRIC CAPITAL CORPORATION, AS RETIRING AGENT
To: HEALTHCARE FINANCIAL SOLUTIONS, LLC, AS SUCCESSOR AGENT
Reel/Frame 037145/0503 →
SECURITY INTEREST Recorded Apr 22, 2014
From: BEAVER-VISITEC INTERNATIONAL (US), INC.
To: GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT
Reel/Frame 032738/0320 →