Method and apparatus for screening combinatorial libraries of semiconducting properties
View Patent ↗This invention discloses methods, materials, and devices for making and screening combinatorial libraries to identify semi-conducting and thermoelectric materials. The disclosed method includes preparing a combinatorial library of materials, and identifying library members that are semiconductors. The method may include determining a thermoelectric figure of merit, ZT, for each member of a second combinatorial library of materials. The method determines ZT by applying an oscillatory voltage across the library members, measuring power dissipated by library members, and calculating ZT from the power dissipated. The method may also include isolating single-phase materials of the semiconducting library members. The present invention also discloses an apparatus for discovering thermoelectric materials using combinatorial techniques. The apparatus includes a first combinatorial library of materials comprised of thin films arrayed on a substrate, and a device for identifying semiconducting members of the first combinatorial library. In addition, the apparatus may include a device for measuring ZT—a voltage source for applying an oscillatory electrical potential across members of a second combinatorial library arrayed on a substrate, and a device for measuring the resulting power dissipated by library members. The apparatus may also include a device for isolating single-phase materials of library members that were identified as semiconductors.
1. An apparatus for discovering materials comprising:
a combinatorial library of materials comprised of thin films arrayed on an infrared transparent substrate; and
a device for identifying semiconducting members of the combinatorial library of materials, wherein the infrared transparent substrate comprises an infrared transparent membrane disposed on a support layer, the infrared transparent membrane interposed between the thin films and the support layer.
2. The apparatus of claim 1 , wherein the infrared transparent membrane is Si 3 N 4 .
3. The apparatus of claim 1 , wherein the support layer has apertures aligned with the thin films.
4. An apparatus for discovering materials comprising:
a combinatorial library of materials comprised of thin films arrayed on a substrate; and
a device for identifying semiconducting members of the combinatorial library of materials, wherein the substrate comprises a passivation layer disposed on a support layer, the passivation layer interposed between the thin films and the support layer and adapted to prevent diffusion between the thin films and the support layer.
5. An apparatus for discovering materials comprising:
a combinatorial library of materials comprised of thin films arrayed on an infrared opaque substrate; and
a device for identifying semiconducting members of the combinatorial library of materials.
6. An apparatus for discovering materials comprising:
a combinatorial library of materials comprised of thin films arrayed on an infrared reflective layer disposed on a support layer, the infrared reflective layer interposed between the thin films and the support layer; and
a device for identifying semiconducting members of the combinatorial library of materials.
7. The apparatus of any of claims 1 , 4 , 5 or 6 , wherein the device for identifying semiconducting members of the combinatorial library of materials is an FTIR spectrometer.
8. The apparatus of claim 7 , wherein the device for identifying semiconducting members of the combinatorial library of materials is an FTIR microscope spectrometer having a computer-controlled stage for positioning the thin films arrayed on the substrate.
9. An apparatus for identifying a semiconducting material comprising:
a substrate;
a reflective layer contacting the substrate;
a combinatorial library of candidate materials disposed above the substrate;
a radiation source configured to direct at the candidate materials a radiation having a range of wavelengths at least partially between about 0.6μ to about 30μ; and
a measurement device configured to measure a fraction of the radiation reflected by a candidate material as a function of wavelength and to identify a local minimum in the reflected radiation as a function of wavelength between about 0.6μ to about 30μ to identify the candidate material as a semiconductor material.
10. The apparatus of claim 9 wherein the substrate is opaque to the radiation and the reflective layer is disposed between the substrate and the library of candidate materials.
11. The apparatus of claim 9 wherein the reflective layer includes a refractory metal.
12. The apparatus of claim 9 wherein the substrate is transparent to the radiation and the substrate is disposed between the reflective layer and the library of candidate materials.
13. An apparatus for identifying a semiconducting material comprising:
a substrate including a plurality of apertures disposed therein;
a membrane disposed on the substrate and extending across at least one of the plurality of apertures;
a combinatorial library of candidate materials disposed above the substrate, at least one of the candidate materials disposed on the membrane and aligned with an aperture;
a radiation source configured to direct at the candidate materials a radiation having a range of wavelengths at least partially between about 0.6μ to about 30μ; and
a measurement device configured to measure a fraction of the radiation transmitted through the at least one candidate material as a function of wavelength to identify the candidate material as a semiconductor material.
14. The apparatus of claim 13 wherein the measurement device is further configured to
measure a fraction of the radiation reflected by the candidate material as a function of wavelength, and
identify the candidate material as a semiconductor material from an analysis of both the reflected and transmitted radiation.
15. An apparatus for identifying a semiconducting material comprising:
a combinatorial library of candidate materials;
a radiation source configured to direct at the candidate materials a radiation having a range of wavelengths at least partially between about 0.6μ to about 30μ;
a substrate supporting the candidate materials and transparent to as least some of the radiation; and
a measurement device configured to measure a fraction of the radiation transmitted through the at least one candidate material as a function of wavelength to identify the candidate material as a semiconductor material.
16. The apparatus of claim 15 wherein the measurement device is further configured to
measure a fraction of the radiation reflected by the candidate material as a function of wavelength, and
identify the candidate material as a semiconductor material from an analysis of both the reflected and transmitted radiation.