Electrically pumped semiconductor active region with a backward diode, for enhancing optical signals
View Patent ↗An electrically pumped optical device includes a semiconductor active region and a backward diode. Both of these structures are located in the current path of the optical device, which is oriented primarily vertically. The active region has a finite extent along at least one lateral dimension. The overall structure improves the electrical performance of the device.
1. An optical device comprising:
a primarily vertical current path for electrical current;
a semiconductor active region located in the current path and having a finite extent along at least one lateral dimension, the electrical current for pumping the semiconductor active region to produce emission of photons;
a backward diode located in the current path; and
a substrate, wherein the semiconductor active region and the backward diode are integrated on the substrate.
2. The optical device of claim 1 further comprising, in the following vertical order:
a first n-doped semiconductor region;
a p-doped semiconductor region; and
a second n-doped semiconductor region;
wherein the semiconductor active region is located between the p-doped semiconductor region and one of the n-doped semiconductor regions, and the backward diode is located between the p-doped semiconductor region and the other of the n-doped semiconductor regions.
3. The optical device of claim 2 wherein the backward diode comprises:
a heavily p-doped layer in contact with a heavily n-doped layer, the heavily p-doped layer also in contact with the p-doped semiconductor region and the heavily n-doped layer also in contact with the n-doped semiconductor region.
4. The optical device of claim 1 further comprising, in the following order along a vertical direction away from the substrate:
a first n-doped semiconductor layer;
a first p-doped semiconductor layer, the semiconductor active region located between the first n-doped semiconductor layer and the first p-doped semiconductor layer;
a second n-doped semiconductor layer, the backward diode located between the first p-doped semiconductor layer and the second n-doped semiconductor layer, wherein the semiconductor active region, the first p-doped semiconductor layer, the backward diode and the second n-doped semiconductor layer all have a similar lateral extent; and
a third n-doped semiconductor layer.
5. The optical device of claim 1 further comprising, in the following order along a vertical direction away from the substrate:
a first n-doped semiconductor layer;
a first p-doped semiconductor layer, the backward diode located between the first n-doped semiconductor layer and the first p-doped semiconductor layer;
a second n-doped semiconductor layer, the semiconductor active region located between the first p-doped semiconductor layer and the second n-doped semiconductor layer, wherein the backward diode, the first p-doped semiconductor layer, the semiconductor active region and the second n-doped semiconductor layer all have a similar lateral extent; and
a third n-doped semiconductor layer.
6. The optical device of claim 1 further comprising, in the following order along a vertical direction away from the substrate:
a first n-doped semiconductor layer;
a first p-doped semiconductor layer, the semiconductor active region located between the first n-doped semiconductor layer and the first p-doped semiconductor layer, wherein the semiconductor active region and the first p-doped semiconductor layer all have a similar lateral extent;
a second p-doped semiconductor layer; and
a second n-doped semiconductor layer, the backward diode having an infinite lateral extent and located between the second p-doped semiconductor layer and the second n-doped semiconductor layer.
7. The optical device of claim 1 further comprising, in the following order along a vertical direction away from the substrate:
a first n-doped semiconductor layer;
a first p-doped semiconductor layer, the backward diode having an infinite lateral extent and located between the first n-doped semiconductor layer and the first p-doped semiconductor layer,
a second n-doped semiconductor layer, the semiconductor active region located between the first p-doped semiconductor layer and the second n-doped semiconductor layer, wherein the semiconductor active region and the second n-doped semiconductor layer have a similar lateral extent; and
a third n-doped semiconductor layer.
8. The optical device of claim 1 wherein the semiconductor active region has a finite extent along one lateral dimension and is extended along another lateral dimension.
9. The optical device of claim 1 wherein the semiconductor active region has a finite extent along two lateral dimensions.
10. The optical device of claim 1 wherein:
the optical device supports an optical mode characterized by a lateral mode width along the at least one lateral dimension; and
a width of the semiconductor active region along the at least one lateral dimension is equal to or less than the lateral mode width.
11. The optical device of claim 1 wherein the backward diode is located before the semiconductor active region in the current path.
12. The optical device of claim 1 wherein the backward diode is located after the semiconductor active region in the current path.
13. The optical device of claim 1 wherein the backward diode has a finite extent along the at least one lateral dimension.
14. The optical device of claim 1 further comprising:
a current blocking layer laterally adjacent to the semiconductor active region.
15. The optical device of claim 1 further comprising:
a bottom mirror and a top mirror forming a vertical laser cavity, the semiconductor active region and the backward diode located in the vertical laser cavity.
16. The optical device of claim 15 wherein the active region has a lateral extent that supports only a single transverse mode of the vertical laser cavity.
17. The optical device of claim 15 wherein the backward diode is located at an optical null of the vertical laser cavity.
18. The optical device of claim 1 wherein the semiconductor active region acts as a waveguide for the optical device.
19. The optical device of claim 18 wherein the semiconductor active region has a lateral extent that supports only a single transverse mode of the waveguide.
20. The optical device of claim 18 further comprising:
two end mirrors forming a longitudinal laser cavity, the semiconductor active region located in the longitudinal laser cavity.
21. The optical device of claim 18 wherein the emission of photons amplifies an optical signal propagating along the waveguide.
22. The optical device of claim 1 further comprising:
a bottom mirror and a top mirror forming a vertical laser cavity, the semiconductor active region and the backward diode located in the vertical laser cavity;
wherein the semiconductor active region acts as a waveguide for the optical device, the vertical laser cavity gain clamps a gain of the semiconductor active region, and the emission of photons amplifies an optical signal propagating along the waveguide.
23. The optical device of claim 1 wherein the lateral extent of the semiconductor active region is less than five microns.
24. The optical device of claim 1 wherein the substrate is an InP substrate.
25. The optical device of claim 1 wherein the optical device operates within the 1.3 micron or within the 1.55 micron wavelength windows.