Semiconductor device having damascene interconnection structure that prevents void formation between interconnections
View Patent ↗A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.
1. A semiconductor device comprising:
a first insulating film;
a first interconnection formed in the first insulating film, the first interconnection extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a second insulating film overlying the first insulating film; and
a second interconnection formed in the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
the interconnection portion having a second length in the first direction, and the contact portion having a third length in the first direction that is not greater than the second length,
wherein the interconnection portion and the contact portion are a same material and contiguous with respect to each other without an interface there between.
2. A semiconductor device comprising:
a first insulating film having a first cavity extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a first interconnection formed in the first cavity of the first insulating film;
a second insulating film overlying the first insulating film, the second insulating film having a second cavity; and
a second interconnection formed in the second cavity of the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
the interconnection portion having a second length in the first direction, and the contact portion having a third length in the first direction that is not greater than the second length,
wherein the interconnection portion and the contact portion are a same material and contiguous with respect to each other without an interface there between.
3. A semiconductor device comprising:
a first insulating film having a first recess extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a first interconnection formed in the first recess of the first insulating film;
a second insulating film overlying the first insulating film, the second insulating film having a second recess; and
a second interconnection formed in the second recess of the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
the interconnection portion having a second length in the first direction, and the contact portion having a third length in the first direction that is not greater than the second length,
wherein the interconnection portion and the contact portion are a same material and contiguous with respect to each other without an interface there between.
4. A semiconductor device comprising:
a first insulating film;
a first interconnection formed in the first insulating film, the first interconnection extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a second insulating film overlying the first insulating film; and
a second interconnection formed in the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
wherein the interconnection portion and the contact portion are a unified same material and contiguous with respect to each other without an interface there between.
5. The semiconductor device according to claim 4 , wherein the first insulating film includes silicon oxide.
6. The semiconductor device according to claim 4 , wherein the second insulating film includes silicon oxide.
7. The semiconductor device according to claim 4 , wherein the first interconnection includes a first barrier film and a first main interconnection.
8. The semiconductor device according to claim 7 , wherein the first barrier film includes titanium.
9. The semiconductor device according to claim 7 , wherein the first main interconnection includes copper.
10. The semiconductor device according to claim 4 , wherein the second interconnection includes a second barrier film and a second main interconnection.
11. The semiconductor device according to claim 10 , wherein the second barrier film includes titanium.
12. The semiconductor device according to claim 10 , wherein the second main interconnection includes copper.
13. A semiconductor device comprising:
a first insulating film having a first cavity extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a first interconnection formed in the first cavity of the first insulating film;
a second insulating film overlying the first insulating film, the second insulating film having a second cavity; and
a second interconnection formed in the second cavity of the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
wherein the interconnection portion and the contact portion are a same material and contiguous with respect to each other without an interface there between.
14. The semiconductor device according to claim 13 , wherein the first insulating film includes silicon oxide.
15. The semiconductor device according to claim 13 , wherein the second insulating film includes silicon oxide.
16. The semiconductor device according to claim 13 , wherein the first interconnection includes a first barrier film and a first main interconnection.
17. The semiconductor device according to claim 16 , wherein the first barrier film includes titanium.
18. The semiconductor device according to claim 16 , wherein the first main interconnection includes copper.
19. The semiconductor device according to claim 13 , wherein the second interconnection includes a second barrier film and a second main interconnection.
20. The semiconductor device according to claim 19 , wherein the second barrier film includes titanium.
21. The semiconductor device according to claim 19 , wherein the second main interconnection includes copper.
22. A semiconductor device comprising:
a first insulating film having a first recess extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
a first interconnection formed in the first recess of the first insulating film;
a second insulating film overlying the first insulating film, the second insulating film having a second recess; and
a second interconnection formed in the second recess of the second insulating film, the second interconnection having an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection,
the contact portion having a second width in the second direction that is smaller than the first length and larger than the first width, and being in direct contact with an outer side surface and an upper surface of the first interconnection,
wherein the interconnection portion and the contact portion are a same material and contiguous with respect to each other without an interface there between.
23. The semiconductor device according to claim 22 , wherein the first insulating film includes silicon oxide.
24. The semiconductor device according to claim 22 , wherein the second insulating film includes silicon oxide.
25. The semiconductor device according to claim 22 , wherein the first interconnection includes a first barrier film and a first main interconnection.
26. The semiconductor device according to claim 25 , wherein the first barrier film includes titanium.
27. The semiconductor device according to claim 25 , wherein the first main interconnection includes copper.
28. The semiconductor device according to claim 22 , wherein the second interconnection includes a second barrier film and a second main interconnection.
29. The semiconductor device according to claim 28 , wherein the second barrier film includes titanium.
30. The semiconductor device according to claim 28 , wherein the second main interconnection includes copper.