Method of etching silicon nitride film and method of producing semiconductor device
View Patent ↗Provided is a method of etching a silicon nitride film, which comprises subjecting the silicon nitride film located on copper to dry etching using a mixture of fluorocarbon gas and an inert gas as the reaction gas, the fluorocarbon gas containing CF 4 and CHF 3 supplied at flow rates in a ratio of 3:7 to 0:1 or contains CF 4 and CH 2 F 2 supplied at flow rates in a ratio of 2.5:1 to 0:1, thereby suppressing the formation of copper fluoride.
1. A method of etching a silicon nitride film, which comprises subjecting the silicon nitride film located on copper to dry etching using a mixture of fluorocarbon gas and an inert gas as the reaction gas, said fluorocarbon gas containing both CF 4 and CH 2 F 2 supplied at flow rates in a ratio of 2.5:1 to suppress the formation of copper fluoride.
2. A method of etching a silicon nitride film according to claim 1 , wherein said reaction gas contains oxygen and dry etching is carried out under the condition of ion energy of 1000 V or lower.
3. An etching method according to claim 1 , wherein oxygen plasma processing is applied to after etching with said reaction gas.
4. A method of producing a semiconductor device, which comprises the steps of:
forming a first insulation film consisting of a silicon nitride film located on copper interconnects that is formed on a semiconductor substrate;
forming a second insulation film, that is different from said first insulation film, on said first insulation film;
forming a resist mask pattern on said second insulation film;
forming grooves or holes in said second insulation film via said resist mask pattern;
removing said resist;
removing said first insulation film exposed at the bottom of the grooves or the holes that are formed in said second insulation film; and
forming a metal film in said grooves or the holes, wherein
said first insulation film is removed by dry etching with a mixture of fluorocarbon gas and an inert gas used as the reaction gas, and said fluorocarbon gas contains both CF 4 and CH 2 F 2 supplied at flow rates in a ratio of 2.5:1 to suppress the formation of copper fluoride.
5. A method of producing a semiconductor device according to claim 4 , wherein said reaction gas contains oxygen and dry etching is carried out under the condition of ion energy of 1000 V or lower.
6. A method of producing a semiconductor device according to claim 4 , wherein oxygen plasma processing is applied after etching with said reaction gas.