Injection valve
View Patent ↗A method for producing a filter element includes forming longitudinal ducts extending between upstream and downstream surfaces of the filter element, and installing a heating element for heating regions of walls of the ducts along longitudinal extent of the walls. The filter element is arranged inside an injection valve of an internal combustion engine.
1. Method for producing a filter element for an injection valve of an internal combustion engine comprising:
selecting a nonporous semiconductor material for the filter element; and
forming linear parallel longitudinally extending fluid flow ducts through the semiconductor material.
2. Method according to claim 1 , wherein the ducts are etched anisotropically.
3. Method according to claim 1 , wherein the semiconductor selected is silicon.
4. Method according to claim 1 , wherein the step of forming linear ducts in the semiconductor includes forming longitudinal ducts extending between upstream and downstream surfaces of the filter element.
5. Method of producing a filter element arranged inside an injection valve of an internal combustion engine, comprising:
selecting a nonporous material for the filter element;
forming linear parallel longitudinally extending ducts through said nonporous material, said ducts extending between upstream and downstream surfaces of the filter element; and
providing heating means for heating regions of walls of the ducts along a longitudinal extent of the walls.
6. Method according to claim 5 , further comprising making the filter element at least partially from a semiconducting material at least in a vicinity of fuel flow.
7. Method according to claim 6 , wherein the semiconducting material includes silicon.
8. Method according to claim 6 , wherein the semiconducting material includes conductive aluminum metal.
9. Method according to claim 5 , further comprising installing a perforated stabilizing plate, through which fuel can flow, wherein:
said stabilizing plate is made from a metal; and
said stabilizing plate is arranged on an outflow side of the filter element.
10. Method according to claim 5 , further comprising:
forming said filter element with a plurality of semiconductor plates arranged one behind the other; and
providing the semiconductor boards with said linear longitudinal ducts.
11. Method according to claim 5 , further comprising thermally insulating the filter element in relation to a housing of the injection valve.
12. The method according to claim 1 , further comprising:
forming said filter element with a central opening having a size which is selected to accommodate and contact a valve needle of said injection valve.
13. The method according to claim 12 , further comprising:
forming said filter element with a perimeter having a size and shape which are selected to correspond to a size and shape of a fuel inflow duct of said injection valve.
14. The method according to claim 5 , further comprising:
forming said filter element with a central opening having a size which is selected to accommodate and contact a valve needle of said injection valve.
15. The method according to claim 14 , further comprising:
forming said filter element with a perimeter having a size and shape which are selected to correspond to a size and shape of a fuel inflow duct of said injection valve.
16. The method according to claim 1 , wherein said semiconductor is monocrystalline silicon.