IP Library Granted Patent US 6,870,321
Granted Patent B2
US 6,870,321 · App. 10/410,674 · Granted Mar 22, 2005

High-frequency electron source

Assignee: Astrium GmbH
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Quick Facts
Patent No.
US 6,870,321
App. No.
10/410,674
Granted
Mar 22, 2005
Kind
B2
Abstract

A high-frequency electron source includes a discharge chamber having at least one gas inlet for a gas to be ionized and at least one extraction opening for electrons. The high-frequency electron source also includes a first electrode at least partially surrounding the discharge chamber and a keeper electrode at least partially surround the discharge chamber. The first electrode and the keeper electrode are configured to provide a high-frequency electric field therebetween.

Claims (41)

1. A high-frequency electron source, comprising:

a discharge chamber having at least one gas inlet for a gas to be ionized and at least one extraction opening for electrons;

a first electrode at least partially surrounding the discharge chamber;

a keeper electrode at least partially surround the discharge chamber, wherein the first electrode and the keeper electrode are configured to provide a high-frequency electric field therebetween; and

first and second auxiliary electrodes mounted on the discharge chamber and configured to provide d.c. voltage between the first and second auxiliary electrodes.

2. The high-frequency electron source as recited in claim 1 , further comprising a plasma chamber surrounding the discharge chamber.

3. The high-frequency electron source as recited in claim 1 , wherein the high-frequency electric field is provided parallel to a direction of electron extraction.

4. The high-frequency electron source as recited in claim 1 , wherein the high-frequency electric field is provided perpendicular to a direction of electron extraction.

5. The high-frequency electron source as recited in claim 1 , wherein the high-frequency electric field has a frequency between 100 KHz and 50 MHz.

6. The high-frequency electron source as recited in claim 1 , wherein the first electrode and the second electrode are further configured to provide a d.c. voltage therebetween.

7. The high-frequency electron source as recited in claim 1 , wherein at least one of the first, keeper, and auxiliary electrodes include a metallic material selected from the group consisting of titanium, molybdenum, tungsten, aluminum, tantalum, and steel.

8. The high-frequency electron source as recited in claim 1 , wherein at least one of the first, keeper, and auxiliary electrodes include a non-metallic material selected from the group consisting of a graphite, a carbon compound, and a ceramic.

9. The high-frequency electron source as recited in claim 1 , wherein the high-frequency electron source is included in an ion source neutralizer.

10. The high-frequency electron source as recited in claim 1 , wherein the high-frequency electron source is included in an ion thruster.

11. The high-frequency electron source as recited in claim 1 , wherein the first electrode forms a plasma chamber.

12. The high-frequency electron source as recited in claim 11 , wherein the first electrode includes a hollow cathode.

13. The high-frequency electron source as recited in claim 1 , further comprising a high-frequency generator for generating the high-frequency electric field provided between the first electrode and the keeper electrode.

14. The high-frequency electron source as recited in claim 13 , wherein the first electrode is connected to an active output of the high-frequency generator and the keeper electrode has frame potential.

15. The high-frequency electron source as recited in claim 13 , wherein the high-frequency generator includes a radio frequency generator having an adaptation network.

16. The high-frequency electron source as recited in claim 15 , wherein the adaptation network includes a toroidal core transformer.

17. The high-frequency electron source as recited in claim 13 , wherein the keeper electrode is connected to an active output of the high-frequency generator and the first electrode has frame potential.

18. The high-frequency electron source as recited in claim 17 , further comprising a shield electrode surrounding the keeper electrode.

19. A high-frequency electron source, comprising:

a discharge chamber having at least one gas inlet for a gas to be ionized and at least one extraction opening for electrons;

a first electrode at least partially surrounding the discharge chamber and including a hollow cathode; and

a keeper electrode at least partially surround the discharge chamber, wherein the first electrode and the keeper electrode are configured to provide a high-frequency electric field therebetween.

20. The high-frequency electron source as recited in claim 19 , further comprising a plasma chamber surrounding the discharge chamber.

21. The high-frequency electron source as recited in claim 19 , wherein the high-frequency electric field is provided parallel to a direction of electron extraction.

22. The high-frequency electron source as recited in claim 19 , wherein the high-frequency electric field is provided perpendicular to a direction of electron extraction.

23. The high-frequency electron source as recited in claim 19 , wherein the high-frequency electric field has a frequency between 100 KHz and 50 MHz.

24. A high-frequency electron source, comprising:

a discharge chamber having at least one gas inlet for a gas to be ionized and at least one extraction opening for electrons;

a first electrode at least partially surrounding the discharge chamber;

a keeper electrode at least partially surround the discharge chamber; and

a shield electrode surrounding the keeper electrode, wherein the first electrode and the keeper electrode are configured to provide a high-frequency electric field therebetween.

25. The high-frequency electron source as recited in claim 24 , further comprising a high-frequency generator for generating the high-frequency electric field provided between the first electrode and the keeper electrode.

26. The high-frequency electron source as recited in claim 24 , wherein the high-frequency generator includes a radio frequency generator having an adaptation network.

27. The high-frequency electron source as recited in claim 24 , wherein the adaptation network includes a toroidal core transformer.

28. The high-frequency electron source as recited in claim 24 , wherein the keeper electrode is connected to an active output of the high-frequency generator and the first electrode has frame potential.

29. The high-frequency electron source as recited in claim 24 , wherein the first electrode is connected to an active output of the high-frequency generator and the keeper electrode has frame potential.

30. The high-frequency electron source as recited in claim 24 , wherein the first electrode and the second electrode are further configured to provide a d.c. voltage therebetween.

Assignments (4)
CHANGE OF NAME Recorded May 21, 2020
From: ASTRIUM GMBH
To: AIRBUS DS GMBH
Reel/Frame 052726/0616 →
DEMERGER Recorded May 21, 2020
From: AIRBUS DS GMBH
To: AIRBUS - SAFRAN LAUNCHERS GMBH
Reel/Frame 052729/0659 →
CHANGE OF NAME Recorded May 21, 2020
From: AIRBUS - SAFRAN LAUNCHERS GMBH
To: ARIANEGROUP GMBH
Reel/Frame 052741/0274 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2003
From: SCHARTNER, KARL-HEINZ; LOEB, HORST; LEITER, HANS JUERGEN; HARMANN, HANS-PETER
To: ASTRIUM GMBH
Reel/Frame 014291/0626 →
Priority Claims (1)
DE 102 15 660 · Apr 9, 2002 · national
Continuity (1)
Related Publication 20030209961A1 · Nov 13, 2003