Tin antimony solder for MOSFET with TiNiAg back metal
View Patent ↗A semiconductor device is disclosed containing a semiconductor die having a trimetal electrode soldered to a substrate by a Sn—Sb solder.
1. A semiconductor device comprising a semiconductor die having a trimetal electrode soldered to a substrate by a solder consisting essentially of tin and antimony, wherein the trimetal electrode is Ti—Ni—X, where X is a highly conductive element.
2. The semiconductor device of claim 1 , wherein X is Ag.
3. The semiconductor device of claim 1 , wherein the Sn—Sb solder comprises about 95% Sn and about 5% Sb by weight.
4. The semiconductor device of claim 1 , wherein the substrate is a lead frame pad.
5. The semiconductor device of claim 1 , wherein the device is a MOSFET.
6. A method of manufacturing a semiconductor device containing a semiconductor die with a trimetal electrode, said method comprising soldering said trimetal electrode to a substrate by a solder consisting essentially of tin and antimony., wherein the trimetal electrode is Ti—Ni—X, where X is a highly conductive element.
7. The method of claim 6 , wherein X is Ag.
8. The method of claim 6 , wherein the Sn—Sb solder comprises about 95% Sn and about 5% Sb by weight.
9. The method of claim 6 , wherein the substrate is a lead frame pad.
10. The method of claim 6 , wherein the semiconductor device is a MOSFET.