IP Library Granted Patent US 6,853,129
Granted Patent B1
US 6,853,129 · App. 10/412,196 · Granted Feb 8, 2005

Protected substrate structure for a field emission display device

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Quick Facts
Patent No.
US 6,853,129
App. No.
10/412,196
Granted
Feb 8, 2005
Kind
B1
Abstract

A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing areas disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing areas disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing areas.

Claims (14)

1. A protected faceplate structure of a field emission display device, said protected faceplate structure comprising:

a) a faceplate of a field emission display device, said faceplate adapted to have phosphor containing areas disposed above one side thereof; and

b) a barrier layer comprised of an oxide of the lanthanide series, said barrier layer disposed over said one side of said faceplate, said barrier layer adapted to prevent degradation of said faceplate due to electron bombardment by electrons directed towards said phosphor containing areas, wherein said barrier layer includes a selectively light absorbing component.

2. The protected faceplate structure of a field emission display device of claim 1 , wherein said faceplate is comprised of a high-sodium glass substrate.

3. The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer has a thickness sufficient to prevent substantial penetration of said electrons through said barrier layer such that said electrons do not impinge said faceplate.

4. The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is selected from the group consisting of: Y 2 O 3 , La 2 O 3 , CeO 2 , Pr 4 O 11 , Nd 2 O 3 , Pm 2 O 3 , Sm 2 O 3 , EuO 2 , Gd 2 O 3 , TbO 2 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Yb 2 O 3 , Yb 2 O 3 and Lu 2 O 3 , and their mixtures.

5. The protected faceplate structure of a field emission display device of claim 4 , wherein said barrier layer has a thickness of approximately 25 nanometers.

6. The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer prevents the migration of contaminants from said faceplate into said field emission display device.

7. The protected faceplate structure of a field emission display device of claim 2 , wherein said barrier layer prevents the migration of sodium from said faceplate into said field emission display device.

8. The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is electrically conductive.

9. The protected faceplate structure of a field emission display device of claim 1 , wherein said selectively light absorbing component is selected from the group consisting of dyes and pigments.

10. The protected faceplate structure of a field emission display device of claim 1 , wherein each subpixel of said faceplate includes a different selectively light absorbing component.

11. The protected faceplate structure of a field emission display device of claim 1 , wherein said barrier layer is selected from the group consisting of: high density oxides, nitride, Gd 2 O 3 , Yb 2 O 3 , HfO 2 , GdN x , HfN x , and their mixtures.

12. The protected faceplate structure of a field emission display device of claim 11 , wherein said barrier layer has a thickness of approximately 25 nanometers.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT Recorded Jun 24, 2007
From: CANDESCENT TECHNOLOGIES CORPORATION
To: CANON KABUSHIKI KAISHA
Reel/Frame 019466/0517 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2007
From: CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.
To: CANON KABUSHIKI KAISHA
Reel/Frame 019028/0705 →
DOCUMENT PREVIOUSLY RECORDED AT REEL 014216 FRAME 0915 CONTAINED ERRORS IN PATENT APPLICATION NUMBER 09/995,755. DOCUMENT RERECORDED TO CORRECT ERRORS STATED REEL. Recorded Nov 7, 2006
From: CANDESCENT TECHNOLOGIES CORPORATION
To: CANDESCENT TECHNOLOGIES CORPORATION; CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.
Reel/Frame 018497/0796 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2003
From: CANDESCENT TECHNOLOGIES CORPORATION
To: CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.; CANDESCENT TECHNOLOGIES CORPORATION
Reel/Frame 014216/0915 →