Semiconductor laser device fabricating method
View Patent ↗An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21 , and thereafter, a non-doped GaAs protective layer 30 is formed. When the n-type substrate 21 is exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser 29 , an impurity Zn is prevented from evaporating from a p-type GaAs contact layer 28 . The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layer 28 can be prevented. Furthermore, the impurity evaporated from the p-type contact layer 28 can be prevented from readhering onto the exposed n-type substrate 21 . A layer where the n-type GaAs substrate 21 and the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laser 38 is succeedingly formed, and the reliability in long-term operation can be improved.
1. A semiconductor laser device fabricating method for forming a semiconductor laser device having a plurality of light-emitting regions, comprising:
forming on a semiconductor substrate a first semiconductor laser comprising a contact layer located in an uppermost position;
forming a non-doped semiconductor layer on the contact layer of the first semiconductor laser layer;
exposing the semiconductor substrate by removing a region of the first semiconductor laser layer and non-doped semiconductor layer, wherein a non-removed region of the first semiconductor laser layer becomes a light-emitting region;
forming a second semiconductor laser layer on the non-removed section of the first semiconductor laser layer and non-doped semiconductor layer and on the exposed semiconductor substrate; and
exposing a region of the contact layer of the first semiconductor laser layer by removing a region of the second semiconductor laser layer, wherein a non-removed section of the second semiconductor laser layer becomes a light-emitting region.
2. The semiconductor laser device fabricating method as claimed in claim 1 , wherein at least the forming the non-doped semiconductor layer, the exposing the semiconductor substrate and the forming the second semiconductor laser layer are repetitively carried out.
3. The semiconductor laser device fabricating method as claimed in claim 1 , further comprising:
forming a semiconductor layer from a crystal composition different from those of the contact layer and the non-doped semiconductor layer before forming the non-doped semiconductor layer on the contact layer of the first semiconductor laser layers.
4. The semiconductor laser device fabricating method as claimed in claim 3 , wherein an AlGaAs-based semiconductor layer is formed as the semiconductor layer of the different crystal composition.
5. The semiconductor laser device fabricating method as claimed in claim 1 , wherein a GaAs-based semiconductor layer is formed as the non-doped semiconductor layer.
6. The semiconductor laser device fabricating method as claimed in claim 4 , wherein a GaAs-based semiconductor layer is formed as the non-doped semiconductor layer.
7. The semiconductor laser device fabricating method as claimed in claim 6 , wherein the GaAs-based non-doped semiconductor layer has a thickness of not less than 0.2 μm, and the AlGaAs-based semiconductor layer has a thickness of not smaller than 0.1 μm.
8. The semiconductor laser device fabricating method as claimed in claim 5 , wherein a GaAs-based contact layer is formed as the contact layer of the first semiconductor laser layer.
9. The semiconductor laser device fabricating method as claimed in claim 6 , wherein a GaAs-based contact layer is formed as the contact layer of the first semiconductor laser layer.