High-frequency device and communication apparatus

1. A high-frequency device comprising:

a high-frequency element having at least one pair of balanced terminals; and

external input/output terminals connected to terminals of said high-frequency element, wherein one impedance value between one of the pair of balanced terminals and one of the external input/output terminals, and the other impedance value between the other of the pair of balanced terminals and the other of the external input/output terminals are different from each other.

2. The high-frequency device according to claim 1 , wherein the difference of impedance values means that the impedance value of the one of the pair of balanced terminals having a phase advance relative to the other of the pair of balanced terminals is larger than that of the other of the pair of balanced terminals.

3. The high-frequency device according to claim 2 , further comprising a first reactance element provided between at least one of the pair of balanced terminals and the external input/output terminal connected to the one of the pair of balanced terminals.

4. The high-frequency device according to claim 3 , further comprising a second reactance element provided between the other of the pair of balanced terminals and the external input/output terminal connected to the other of the pair of balanced terminals, the second reactance element differing In impedance value from the first reactance element.

5. The high-frequency device according to claim 4 , wherein at least one of said first reactance element and said second reactance element is realized as an inductance component of a wire used when said high-frequency element is mounted by wire bonding in said high frequency device.

6. The high-frequency device according to claim 4 , wherein a value obtained by standardizing the difference between the impedance values of said first reactance element and said second reactance element with respect to the terminal impedance is not larger than 0.2.

7. The high-frequency device according to claim 4 , further comprising a multilayer substrate having a surface-layer electrode provided on its one major surface, an inner-layer electrode on at least one layer provided in said multilayer substrate, and a via hole electrode which connects said surface-layer electrode and said inner-layer electrode to each other, wherein each of said external input/output terminals is realized as said surface-layer electrode;

said high-frequency device is mounted on the other major surface of said substrate; and

at least one of said first reactance element and said second reactance element is provided by an inductance component based on said inner-layer electrode.

8. The high-frequency device according to claim 4 , further comprising:

a plurality of dielectric layers forming a multilayer structure;

interlayer electrodes provided between said dielectric layers; and

a via hole conductor provided so as to straddle some of said plurality of dielectric layers, said via hole conductor connecting all or part of said interlayer electrodes,

wherein said interlayer electrodes and said via hole conductor form a plurality of strip lines and a plurality of capacitors, and

said first reactance element and said second reactance element are formed by said plurality of strip lines, said plurality of capacitors and said via hole conductor.

9. The high-frequency device according to claim 4 , further comprising:

a plurality of dielectric layers forming a multilayer structure;

interlayer electrodes provided between said dielectric layers; and

a via hole conductor provided so as to straddle some of said plurality of dielectric layers, said via hole conductor connecting all or part of said interlayer electrodes,

wherein said interlayer electrodes and said via hole conductor form a plurality of strip lines and a plurality of capacitors, and

said first susceptance element and said second susceptance element are formed by said plurality of strip lines, said plurality of capacitors and said via hole conductor.

10. The high-frequency device according to claim 2 , further comprising a first susceptance element having its one end connected between at least one of the pair of balanced terminals and the external input/output terminal connected to the one of the pair of balanced terminals, and having the other end grounded.

11. The high-frequency device according to claim 10 , further comprising a second susceptance element having its one end connected between the other of the pair of balanced terminals and the external input/output terminal connected to the other of the pair of balanced terminals, and having the other end grounded, the second susceptance element differing in admittance value from the first susceptance element.

12. The high-frequency device according to claim 11 , wherein a value obtained by standardizing the difference between the admittance values of said first susceptance element and said second susceptance element with respect to the terminal impedance is equal to or larger than 5.

13. The high-frequency device according to claim 1 , wherein said high-frequency element comprises a high-frequency filter.

14. The high-frequency device according to claim 13 , wherein said high-frequency filter comprises a surface acoustic wave filter having:

a piezoelectric substrate; and

at least one interdigital transducer provided on said piezoelectric substrate.

15. The high-frequency device according to claim 14 , further comprising first and second lead electrodes formed on said piezoelectric substrate, said first and second lead electrodes being respectively provided between said pair of balanced terminals and said interdigital transducer electrode, wherein said first and second lead electrodes differ in shape or length from each other.

16. The high-frequency device according to claim 14 , wherein said interdigital transducer electrode comprises at least three interdigital transducer electrodes: first, second and third interdigital transducer electrodes;

said surface acoustic wave filter comprises a balanced surface acoustic wave filter using at least one pair of said interdigital transducer electrodes;

one group of electrode fingers of said first interdigital transducer electrode is connected to an unbalanced input/output terminal, while the other group of electrode fingers of said first interdigital transducer element is grounded;

one group of electrode fingers of said interdigital second transducer electrode is connected to a first terminal which is one of said pair of balanced terminals, while the other group of electrode fingers of said interdigital second transducer element is grounded; and

one group of electrode fingers of said third interdigital transducer electrode is connected to a second terminal which is the other of said pair of balanced terminals, while the other group of electrode fingers of said interdigital third transducer element is grounded.

17. The high-frequency device according to claim 14 , wherein said interdigital transducer electrode comprise at least three interdigital transducer electrodes: first, second and third interdigital transducer electrodes;

said surface acoustic wave filter comprises a balanced surface acoustic wave filter using at least one pair of said interdigital transducer electrodes;

one group of electrode fingers of said first interdigital transducer electrode is connected to a first terminal which is one of said pair of balanced terminals, while the other group of electrode fingers of said second interdigital transducer element is connected to a second terminal which is the other of said pair of balanced terminals; and

groups of electrode fingers of said second and third interdigital transducer electrodes are connected in a common unbalanced input/output terminal, while the other groups of electrode fingers of said second and third interdigital transducer electrodes are grounded.

18. The high-frequency device according to claim 16 or 17 , further comprising:

a first resonator connected between one of the groups of second electrode fingers and said first terminal; and

a second resonator connected between one of the groups of third electrode fingers and said second terminal.

19. The high-frequency device according to claim 18 , wherein said first resonator and said resonator differ in shape from each other.

20. The high-frequency device according to claim 1 , further comprising an inductor connecting one of said pair of balanced terminals and the other of said pair of balanced terminals to each other.

21. A communication apparatus comprising at least one of transmitting means and receiving means, wherein said transmitting means or said receiving means uses a high-frequency device comprising:

a high-frequency element having at least one pair of balanced terminals; and

external input/output terminals connected to terminals of said high-frequency element, wherein one impedance value between one of the pair of balanced terminals and one of the external input/output terminals, and the other impedance value between the other of the pair of balanced terminals and the other of the external input/output terminals are different from each other.