Metal-doped single-walled carbon nanotubes and production thereof
View Patent ↗Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.
1. A method for doping single-walled carbon nanotubes (SWNTs) with metal, comprising:
combining a SWNT precursor material and metal in a solution; and
mixing said solution to incorporate at least a portion of said metal with said SWNT precursor material, thereby forming metal-doped SWNTs, wherein mixing said solution comprises sonicating said SWNT precursor material and said metal.
2. The method of claim 1 , wherein combining said SWNT precursor material and said metal comprises combining purified SWNT precursor material with said metal.
3. The method of claim 1 , wherein combining said SWNT precursor material and said metal comprises combining crude SWNT precursor material with said metal.
4. The method of claim 1 , wherein combining said SWNT precursor material and said metal comprises combining said SWNT precursor material with at least one metal selected from the group consisting of Ti-6Al-4V, Ti—Fe, Ti, Mg, Pd, Ta, W, Fe, and organo-metal compounds.
5. The method of claim 1 , wherein mixing said solution comprises mechanically mixing said SWNT precursor material and said metal.
6. The method of claim 1 , further comprising introducing said metal into said solution from a sonic probe.
7. The method of claim 1 , further comprising charging said metal-doped SWNTs with hydrogen.
8. The method of claim 7 , wherein charging said metal-doped SWNTs comprises charging said metal-doped SWNTs with about 3.0 to 8.0 wt % hydrogen at ambient pressure and room temperature.
9. The method of claim 1 , further comprising combining said SWNT precursor material and said metal in a solvent.
10. The method of claim 1 , further comprising capping said metal-doped SWNTs with carbon dioxide.
11. A method for doping single-walled carbon nanotubes (SWNTs) with metal, comprising:
providing a solvent;
cutting and aligning a SWNT precursor material;
introducing said SWNT precursor material into said solvent;
introducing a metal into said solvent; and
mixing said metal and said SWNT precursor material in said solvent at least until a portion of said metal is incorporated with said SWNT precursor material.
12. The method of claim 11 , further comprising forming said SWNT precursor material by a process selected from the group consisting of chemical vapor deposition, arc-generation, and laser-vaporization.
13. The method of claim 11 , further comprising purifying said SWNT precursor material.
14. A method for doping single-walled carbon nanotubes (SWNTs) with metal, comprising cutting and aligning a SWNT precursor material, mixing said cut and aligned SWNT precursor material with said metal until at least a portion of said metal is incorporated with said cut and alingned SWNT precursor material.
15. A method for doping single-walled carbon nanotubes (SWNTs) with metal, comprising:
combining a SWNT precursor material and metal in a solution, wherein introducing said metal into said solution is from a sonic probe; and
mixing said solution to incorporate at least a portion of said metal with said SWNT precursor material, thereby forming metal-doped SWNTs.
16. The method of claim 15 , wherein combining said SWNT precursor material and said metal comprises combining purified SWNT precursor material with said metal.
17. The method of claim 15 , wherein combining said SWNT precursor material and said metal comprises combining crude SWNT precursor material with said metal.
18. The method of claim 15 , wherein combining said SWNT precursor material and said metal comprises combining said SWNT precursor material with at least one metal selected from the group consisting of Ti-6Al-4V, Ti—Fe, Ti, Mg, Pd, Ta, W, Fe, and organo-metallic compounds.
19. The method of claim 15 , wherein mixing said solution comprises mechanically mixing said SWNT precursor material and said metal.
20. The method of claim 15 , wherein mixing said solution comprises sonicating said SWNT precursor material and said metal.
21. The method of claim 15 , further comprising charging said metal-doped SWNTs with hydrogen.
22. The method of claim 21 , wherein charging said metal-doped SWNTs comprises charging said metal-doped SWNTs wit about 3.0 to 8.0 wt % hydrogen at ambient pressure and room temperature.
23. The method of claim 15 , further comprising combining said SWNT precursor material and said metal in a solvent.
24. The method of claim 15 , further comprising capping said metal-doped SWNTs with carbon dioxide.
25. A method for doping single-walled carbon nanotubes (SWNTs) with metal, comprising:
combining a SWNT precursor material and metal in a solution;
mixing said solution to incorporate at least a portion of said metal with said SWNT precursor material, thereby forming metal-doped SWNTs; and
capping said metal-doped SWNTs with carbon dioxide.
26. The method of claim 25 , wherein combining said SWNT precursor material and said metal comprises combining purified SWNT precursor material with said metal.
27. The method of claim 25 , wherein combining said SWNT precursor material and said metal comprises combining crude SWNT precursor material with said metal.
28. The method of claim 25 , wherein combining said SWNT precursor material and said metal comprises combining said SWNT precursor material with at least one metal selected from the group consisting of Ti-6Al-4V, Ti—Fe, Ti, Mg, Pd, Ta, W, Fe, and organo-metallic compounds.
29. The method of claim 25 , wherein mixing said solution comprises mechanically mixing said SWNT precursor material and said metal.
30. The method of claim 25 , wherein mixing said solution comprises sonicating said SWNT precursor material and said metal.
31. The method of claim 25 , further comprising introducing said metal into said solution from a sonic probe.
32. The method of claim 25 , further comprising charging said metal-doped SWNTs with hydrogen.
33. The method of claim 32 , wherein charging said metal-doped SWNTs comprises charging said metal-doped SWNTs wit about 3.0 to 8.0 wt % hydrogen at ambient pressure and room temperature.
34. The method of claim 25 , further comprising combining said SWNT precursor material and said metal in a solvent.