Electro-optical device and electronic apparatus
The invention provides an electro-optical device that can include a pixel electrode, a thin-film transistor (TFT) including a semiconductor layer connected to the pixel electrode, and a data line and scanning line connected to the TFT. The scanning line can include a narrow part as a gate electrode facing a channel region in the semiconductor layer, and a wide part not facing the channel region. Such construction permits the electro-optical device to display high quality images by preventing light from impinging the TFT.
1. An electro-optical device, comprising:
a pixel electrode provided above a substrate;
a thin film transistor having a channel region that supplies image signals to the pixel electrode by switching operations of the thin film transistor;
a first wiring line that supplies the image signals to the thin film transistor; and
a second wiring line that supplies scanning signals to the thin film transistor for controlling the switching operations of the thin film transistor,
the second wiring line having a narrow part as a gate electrode facing the channel region of the thin film transistor, and a wide part wider than the narrow part and not facing the channel region.
2. The electro-optical device according to claim 1 , at least a portion of the wide part having a region overlapping the first wiring line in a plan view.
3. The electro-optical device according to claim 1 , the wide part including a region extended from the narrow part.
4. The electro-optical device according to claim 1 , the wide part including a region connected from the narrow part.
5. The electro-optical device according to claim 1 , the wide part having a light shielding material.
6. The electro-optical device according to claim 1 , at least one of the second wiring line and an electrode part having a multilayer structure.
7. The electro-optical device according to claim 1 , the wide part being extended to one or both extending directions of the channel region viewed from the side line of the narrow part.
8. The electro-optical device according to claim 1 , comprising the pixel electrodes arranged as a matrix,
the channel region being formed in each cross point region, in which a first slender space, extending so as to thread through adjoining pixel electrodes with interposition of the second wiring line in a plan view, intersects a second slender space, extending so as to thread through adjoining pixel electrodes with interposition of the first wiring line in a plan view.
9. The electro-optical device according to claim 8 , comprising the channel region, a source region, and a drain region formed so as to extend along the second space,
a width of the narrow part being equal to a length of the channel region along the second space, and
a width of the wide part being larger than the length of the channel region along the second space.
10. The electro-optical device according to claim 1 , a lower side light shielding layer being further provided under the thin film transistor.
11. An electronic apparatus having a electro-optical device, comprising:
a pixel electrode provided above a substrate;
a thin film transistor having a channel region that supplies image signals to the pixel electrodes by switching operations of the thin film transistor;
a first wiring line that supplies the image signals to the thin film transistor; and
a second wiring line for that supplies scanning signals to the thin film transistor for controlling the switching operations of the thin film transistor,
the second wiring line including a narrow part as a gate electrode facing the channel region of the thin film transistor, and a wide part wider than the narrow part and not facing the channel region.
12. An electro-optical device comprising:
a pixel electrode provided above a substrate;
a thin film transistor that supplies image signals to the thin film transistor by controlling the switching operations of the thin film transistor;
a first wiring line that supplies the image signals to the thin film transistor;
a second wiring line that supplies scanning signals to the thin film transistor for controlling the switching operations of the thin film transistor; and
an electrode part having a narrow part as a gate electrode facing the channel region of the thin film transistor, and a wide part wider than the narrow part and not facing the channel region,
the electrode part being electrically coupled to the second wiring line.
13. The electro-optical device according to claim 12 , the electrode part and the second wiring line being electrically coupled via a contact hole.
14. The electro-optical device according to claim 12 , at least a part of the wide part having an area overlapping the first wiring line in plan view.
15. The electro-optical device according to claim 12 , the wide part including a part extended from the narrow part.
16. The electro-optical device according to claim 12 , the wide part including a part connected from the narrow part.
17. The electro-optical device according to claim 12 , the wide part having a light shielding material.
18. The electro-optical device according to claim 12 , at least one of the second wiring line and the electrode part having a multilayer structure.
19. The electro-optical device according to claim 12 , the wide part being extended to one or both extending directions of the channel region viewed from the side line of the narrow part.
20. The electro-optical device according to claim 12 , comprising the pixel electrodes arranged as a matrix,
the channel region being formed in each cross point region, in which a first slender space, extending so as to thread through adjoining pixel electrodes with interposition of the second wiring line in a plan view, intersects a second slender space, extending so as to thread through adjoining pixel electrodes with interposition of the first wiring line in a plan view.
21. The electro-optical device according to claim 20 , comprising the channel region, the source region, and the drain region formed so as to extend along the second space,
a width of the narrow part being equal to the length of the channel region along the second space, and
a width of the wide part being larger than said length.
22. The electro-optical device according to claim 20 , a lower light shielding layer being further provided under the thin film transistor.
23. An electronic apparatus having an electro-optical device, comprising:
a pixel electrode provided above a substrate;
a thin film transistor that supplies image signals to the pixel electrodes by switching operations of the thin film transistor;
a first wiring line that supplies the image signals to the thin film transistor;
a second wiring line that supplies scanning signals to the thin film transistor for controlling the switching operations of the thin film; and
an electrode part comprising the second wiring line having a narrow part as a gate electrode facing the channel region of the thin film transistor, and a wide part wider than the narrow part and not facing the channel region, the electrode part being electrically coupled to the second wiring line.