Barrier material encapsulation of programmable material
View Patent ↗A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials, forming a second dielectric material on the first material, etching an opening in the second dielectric material with an etchant that, between the first dielectric material and the second dielectric material, favors removal of the second dielectric material, and forming a contact in the opening to the stacked materials. An apparatus comprising a contact point formed on a substrate, a volume of programmable material formed on the contact point, a signal line formed on the volume of programmable material, a first dielectric material conformally formed on the signal line, a different second dielectric material formed on the first dielectric material, and a contact formed through the first dielectric material and the second dielectric material to the signal line.
1. An apparatus comprising:
a contact point formed on a substrate;
a volume of programmable material formed on the contact point having a pair of opposed edges;
a signal line formed on the volume of programmable material and having a pair of opposed edges, wherein the volume of programmable material and the signal line are stacked such that said edges of said line and said material are aligned vertically;
a first dielectric material conformally formed on the signal line;
a different second dielectric material formed on the first dielectric material; and
a contact formed through the first dielectric material and the second dielectric material to the signal line.
2. The apparatus of claim 1 , wherein the stacked material is formed on a surface of the substrate and the first dielectric material encapsulates the stacked material between the surface and the first dielectric material.
3. The apparatus of claim 1 , wherein the first dielectric material and the second dielectric material each have an etch characteristic such that an etchant selectively favors etching one of the first dielectric material and the second dielectric material over the other of the first dielectric material and the second dielectric material.
4. The apparatus of claim 3 , wherein the first dielectric material is silicon nitride.
5. An apparatus comprising:
a first signal line formed on a substrate;
programmable material coupled to the first signal line;
a second signal line coupled to the programmable material, such that the programmable material and the second signal line are stacked, said second signal line is orthogonal to the first signal line, said second signal line and said material each having opposed edges, such that the edges of said second signal line are vertically aligned with said edges of said material;
a first dielectric material conformally formed on the line of stacked material;
a different second dielectric material formed on the first dielectric material; and
a contact formed through the first dielectric material and the second dielectric material to the line of stacked material.
6. The apparatus of claim 5 , wherein the line of stacked material is formed on a surface of the substrate and the first dielectric material encapsulates the line of stacked material between the surface and the first dielectric material.
7. The apparatus of claim 5 , wherein the programmable material is a phase change material.
8. The apparatus of claim 5 , wherein the first dielectric material and the second dielectric material each have an etch characteristic such that an etchant selectively favors etching one of the first dielectric material and the second dielectric material over the other of the first dielectric material and the second dielectric material.