Liquid crystal display device having array substrate of color filter on thin film transistor structure and manufacturing method thereof
View Patent ↗A liquid crystal display device having an array substrate of a color filter on a thin film transistor structure and a manufacturing method thereof are disclosed in the present invention. The liquid crystal display device having an array substrate includes an array substrate, a plurality of gate lines and data lines over the substrate, the gate and data lines defining a pixel region, a thin film transistor formed at each crossing region of the gate lines and the data lines, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode, a black matrix over the thin film transistor, exposing a portion of the drain electrode, a first pixel electrode at the pixel region, contacting the exposed portion of the drain electrode, a color filter on the first pixel electrode at the pixel region, and a second pixel electrode on the color filter, directly contacting the first pixel electrode.
1. A liquid crystal display device having an array substrate, comprising:
a plurality of gate lines and data lines over the array substrate, the gate and data lines defining a pixel region;
a thin film transistor formed at each crossing region of the gate lines and the data lines, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode;
a black matrix over the thin film transistor, exposing a portion of the drain electrode;
a first pixel electrode at the pixel region, contacting the exposed portion of the drain electrode;
a color filter on the first pixel electrode at the pixel region; and
a second pixel electrode on the color filter, contacting the first pixel electrode.
2. The device according to claim 1 , further comprising a first insulating layer between the gate electrode and the active layer.
3. The device according to claim 2 , further comprising a second insulating layer either on the thin film transistor or on the black matrix.
4. The device according to claim 2 , wherein the first insulating layer is formed of an inorganic material.
5. The device according to claim 4 , wherein the inorganic material is selected from the group consisting of silicon nitride and silicon oxide.
6. The device according to claim 2 , further comprising a storage capacitor on the first insulating layer.
7. The device according to claim 6 , wherein the first pixel electrode contacts the storage capacitor through a storage contact hole in the black matrix.
8. The device according to claim 1 , wherein the first pixel electrode contacts the drain electrode through a drain contact hole in the black matrix.
9. The device according to claim 1 , wherein the black matrix exposes an end side portion of the drain electrode, so that the first pixel electrode directly contacts the end side portion of the drain electrode.
10. The device according to claim 1 , further comprising an ohmic contact layer between the active layer and the source and drain electrodes.
11. The device according to claim 1 , wherein the first pixel electrode directly contacts the substrate.
12. A method of forming a liquid crystal display device having an array substrate, comprising:
forming a plurality of gate lines and data lines over the array substrate, the gate and data lines defining a pixel region;
forming a thin film transistor formed at each crossing region of the gate lines and the data lines, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode;
forming a black matrix over the thin film transistor, exposing a portion of the drain electrode;
forming a first pixel electrode at the pixel region, contacting the exposed portion of the drain electrode;
forming a color filter on the first pixel electrode at the pixel region; and
forming a second pixel electrode on the color filter, contacting the first pixel electrode.
13. The method according to claim 12 , further comprising forming a first insulating layer between the gate electrode and the active layer.
14. The method according to claim 13 , further comprising forming a second insulating layer either on the thin film transistor or on the black matrix.
15. The method according to claim 13 , further comprising forming a second insulating layer on both the thin film transistor and the black matrix.
16. The method according to claim 13 , wherein the first insulating layer is formed of an inorganic material.
17. The method according to claim 16 , wherein the inorganic material is selected from the group consisting of silicon nitride and silicon oxide.
18. The method according to claim 13 , further comprising forming a storage capacitor on the first insulating layer.
19. The method according to claim 18 , wherein the first pixel electrode contacts the storage capacitor through a storage contact hole in the black matrix.
20. The method according to claim 12 , wherein the first pixel electrode contacts the drain electrode through a drain contact hole in the black matrix.
21. The method according to claim 12 , wherein the black matrix exposes an end side portion of the drain electrode, so that the first pixel electrode directly contacts the end side portion of the drain electrode.
22. The method according to claim 12 , further comprising forming an ohmic contact layer between the active layer and the source and drain electrodes.
23. The method according to claim 12 , wherein the first pixel electrode directly contacts the substrate.
24. The method according to claim 12 , wherein the forming first and second pixel electrodes comprises,
depositing a first transparent metal electrode layer over the substrate;
depositing a second transparent metal electrode layer over the first transparent metal electrode layer; and
patterning the first and second transparent metal electrode layers at the same time.