Image display unit and method of manufacturing the same
View Patent ↗An MEM unit according to the invention comprises an Si (silicon) substrate 1 having such a thickness as to transmit a visible light therethrough, an insulating layer 2 formed in contact with the upper surface of the Si substrate 1 , a lower electrode layer 3 formed in contact with the upper surface of the insulating layer 2 , a sacrificial layer gap 4 of a space formed in the partial region of the upper surface of the lower electrode layer 3 , a movable film 5 formed on the upper surface of the lower electrode layer 3 to cover the sacrificial layer gap 4 , an upper electrode 6 formed in contact with the upper part of the movable film 5 , a contact hole 7 penetrating to reach the surface of the lower electrode layer 3 from the surface of the movable film 5 , and a lower electrode 8 formed from the surroundings of the upper part of the contact hole 7 to the surface of the lower electrode layer 3 through the contact hole 7.
1. An image display unit to function as a transmission type mechanical electro modulator having two upper and lower electrode layers formed apart from each other and serving to change a transmittance of a light irradiated in an orthogonal direction to a horizontal direction of a body by applying a voltage between the two electrode layers,
wherein the body including the two electrode layers in a component is formed on a silicon substrate of such a thickness as to have a predetermined transmittance for a visible light; and wherein an insulating layer is provided between the silicon substrate and the lower one of the two electrode layers, a movable film is provided between the two electrode layers, and a gap portion covered with the movable film is provided on the lower electrode layer.
2. The image display unit according to claim 1 , wherein the silicon substrate has a predetermined transmittance for at least a part of a visible light having a wavelength of 400 to 650 nm.
3. The image display unit according to claim 1 , wherein a contact hole penetrating to reach a surface of the lower electrode layer from a surface of an end provided apart from an upper part of the gap portion of the movable film is formed on the surface.
4. The image display unit according to claim 3 , further comprising a lower electrode reaching the surface of the lower electrode layer through an inside of the contact hole and having an electrical contact with the electrode layer.
5. The image display unit according to claim 1 , wherein a semiconductor circuit for supplying a driving voltage to be applied to the two electrodes is formed on the silicon substrate.
6. The image display unit according to claim 5 , wherein an image signal processing semiconductor circuit for controlling the driving voltage is formed on the silicon substrate.
7. The image display unit according to claim 1 , wherein the thickness of the silicon substrate is equal or less than 50 μm.
8. An image display unit to function as a reflection type mechanical electro modulator having two upper and lower electrode layers formed apart from each other and serving to change a reflectance of a light irradiated in an orthogonal direction to a horizontal direction of a body by applying a voltage between the two electrode layers,
wherein the body including the two electrode layers in a component is formed on a silicon substrate, and
wherein an insulating layer is provided between the silicon substrate and a lower one of the two electrode layers, a movable film is provided between the two electrode layers, and a gap portion covered with a movable film is provided on the lower electrode layer.
9. The image display unit according to claim 8 , wherein a contact hole penetrating to reach a surface of the lower electrode layer from a surface of an end provided apart from an upper part of the gap portion of the movable film is formed on the surface.
10. The image display unit according to claim 9 , further comprising a lower electrode reaching the surface of the lower electrode layer through an inside of the contact hole and having an electrical contact with the electrode layer.
11. The image display unit according to claim 8 , wherein a silicon substrate having a lower electrode layer formed by injecting a substance to increase a conductivity of silicon into an upper surface layer is used in place of the silicon substrate, the insulating layer and the lower electrode layer.
12. The image display unit according to claim 8 , wherein a semiconductor circuit for supplying a driving voltage to be applied to the two electrodes is formed on the silicon substrate.
13. The image display unit according to claim 12 , wherein an image signal processing semiconductor circuit for controlling the driving voltage is formed on the silicon substrate.