Wafer level underfill and interconnect process
View Patent ↗A chip scale package and a method for its manufacture which include providing sticky interconnects on a surface of a semiconductor die, the interconnects being surrounded by a layer of thermal epoxy.
1. A semiconductor device, comprising:
a semiconductor die having a major surface;
an electrical contact on said major surface of said semiconductor die;
an interconnect on said electrical contact, said interconnect being composed of a sticky epoxy containing conductive particles; and
a layer of thermal epoxy disposed on said major surface and surrounding said interconnect.
2. A semiconductor device according to claim 1 , wherein said layer of thermal epoxy has a maximum height below that of said interconnect.
3. A semiconductor device according to claim 1 , wherein said conductive particles comprise of silver.
4. A semiconductor device according to claim 1 , wherein said conductive epoxy comprises of 60% to 85% silver particles by weight, said particles being 3 to 40 microns.
5. A semiconductor device according to claim 1 , wherein all major electrical contacts of said die are disposed on said major surface, and wherein interconnects are formed on all major electrical contacts of said die.
6. A semiconductor device according to claim 5 , wherein said die is one of MOSFET, IGBT and diode.
7. A semiconductor device according to claim 1 , wherein said die is one of MOSFET, IGBT and diode.
8. A semiconductor device, comprising:
a semiconductor die having a major surface;
an electrical contact on said major surface of said semiconductor die;
an electrical interconnect comprised of an epoxy containing conductive particle and disposed on said electrical contact; and
a layer of underfilling material disposed on said electrical contact around said electrical interconnect, said underfilling material being comprised of an uncured curable material.
9. A semiconductor device according to claim 8 , wherein said underfilling material is a thermal epoxy.
10. A semiconductor device according to claim 8 , wherein said particles are 3 to 40 microns.
11. A semiconductor device according to claim 8 , wherein said conductive particles are comprised of silver.
12. A semiconductor device according to claim 8 , wherein all major electrical contacts of said die are disposed on said major surface, and wherein interconnects are formed on all major electrical contacts of said die.
13. A semiconductor device according to claim 8 , wherein said die is one of MOSFET, IGBT and diode.
14. A semiconductor device comprising:
a semiconductor die having at least one major electrode disposed on a major surface thereof;
an electrical connector formed on said major electrode, said electrical connector being adapted for electrical connection to a conductive pad; and
an underfilling body disposed on said one major electrode, said underfilling body being adapted to become disposed between said electrode and a circuit board when said device is mounted on said circuit board wherein said major electrode is a power electrode of said semiconductor die.
15. A semiconductor device according to claim 14 , wherein said underfilling body is comprised of a curable epoxy.
16. A semiconductor device according to claim 15 , wherein said epoxy is thermally curable.
17. A semiconductor device according to claim 14 , wherein said semiconductor die is a power MOSFET.