In-plane switching mode liquid crystal display device and fabrication method thereof
View Patent ↗An in-plane switching mode liquid crystal display device including a first substrate and a second substrate, data lines and gate lines arranged in a matrix form on the first substrate to define a pixel, a thin film transistor at a cross portion of the gate and data lines, a black matrix over the gate lines, data lines, and the thin film transistor, a color filter layer in the pixel, at least a pair of a common electrode and a pixel electrode over the color filter layer and a liquid crystal layer between the first and second substrates.
1. An in-plane switching mode liquid crystal display device, comprising:
a first substrate and a second substrate;
data lines and gate lines arranged in a matrix form on the first substrate to define a pixel;
a thin film transistor at a cross portion of the gate and data lines;
a black matrix over the gate lines, data lines, and the thin film transistor;
a color filter layer in the pixel;
at least a pair of a common electrode and a pixel electrode over the color filter layer;
a storage electrode positioned under the color filter layer, the storage electrode is connected to the pixel electrode; and
a liquid crystal layer between the first and second substrates.
2. The device of claim 1 , wherein the thin film transistor further comprises:
a gate electrode;
a gate insulating layer on the gate electrode;
a semiconductor layer on the gate insulating layer; and
a source electrode and a drain electrode on the semiconductor layer.
3. The device of claim 1 , wherein the storage electrode overlaps one of the gate lines, the storage electrode being on the gate insulating layer.
4. The device of claim 1 , further comprising an overcoat layer on the color filter layer.
5. The device of claim 1 , further comprising a common line being parallel with the gate lines.
6. The device of claim 5 , wherein the storage electrode overlaps the common line.
7. The device of claim 1 , wherein a first portion of the common electrode overlaps the data lines.
8. The device of claim 7 , wherein a second portion of the common electrode overlaps one of the gate lines and the thin film transistor.
9. The device of claim 8 , wherein a third portion of the common electrode overlaps another one of the gate lines.
10. The device of claim 1 , wherein pixel electrodes are between common electrodes with a predetermined gap between each of the common electrodes and each of the pixel electrodes.
11. The device of claim 1 , further comprising a gate pad and a data pad on the first substrate.
12. The device of claim 11 , wherein the gate pad and data pad include one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
13. The device of claim 10 , wherein the pixel electrodes are also formed of one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
14. The device of claim 1 , further comprising first and second alignment layers on the first and second substrates.
15. An in-plane switching mode liquid crystal display device comprising:
a first substrate and a second substrate, the first substrate including:
data lines and gate lines arranged in a matrix form on the first substrate to define a pixel;
a thin film transistor at a cross portion of the gate and data lines, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;
a black matrix over the gate lines, data lines, and the thin film transistor;
a color filter layer in the pixel;
a storage electrode positioned under the color filter layer, the storage electrode is connected to the drain electrode and the pixel electrode;
an overcoat layer over the color filter layer; and at least a pair of a common electrode and a pixel electrode on the overcoat layer.
16. The device of claim 15 , wherein the first substrate further includes a first alignment layer in the first substrate.
17. The device of claim 15 , wherein the second substrate includes a second alignment layer.
18. The device of claim 15 , further comprising a liquid crystal layer between the first and second substrates.
19. A fabrication method of an in-plane switching mode LCD device comprising:
forming a gate electrode on a first substrate;
forming a semiconductor layer on the gate electrode;
forming a source electrode and a drain electrode on the semiconductor layer;
forming a storage electrode connected to the drain electrode;
forming a passivation layer on the first substrate;
forming a black matrix above the passivation layer;
forming a color filter layer above the passivation layer and the storage electrode; and
forming a pixel electrode and a common electrode over the color filter layer such that the pixel electrode is connected to the storage electrode.
20. The method of claim 19 , further comprising forming an overcoat layer on the color filter layer.
21. The method of claim 19 , wherein the first substrate further includes a first alignment layer.